欢迎登录材料期刊网

材料期刊网

高级检索

简述了单晶生长用ZnSe多晶料的制备方法.分别以颗粒状和粉末状的高纯单质Zn和Se为原料,采用元素直接合成法合成了ZnSe多晶料,分析了直接合成的困难所在.理论分析和实验研究均表明:前期H2-O2焰下高温灼烧(~1500℃)使Zn和Se充分反应,是合成工艺的关键;延长后期恒温时间(不少于2周),使扩散反应进行完全,有利于获得更接近化学计量比的ZnSe多晶料.

参考文献

[1] Kalisch H.;Ruland R.;Berntgen J.;Krysa A.;Heuken M.;Hamadeh H. .ZnSe : Sb/ZnSe : Cl heteroepitaxial LED grown by MOVPE[J].Journal of Crystal Growth,2000(0):1163-1165.
[2] Cho MW.;Wenisch H.;Makino H.;Yao T.;Chang JH. .Blue-green light emitting diodes with new p-contact layers: ZnSe/BeTe[J].Physica Status Solidi, A. Applied Research,2000(1):217-223.
[3] Arne Gust;Garsten Kruse;Matthias Klude et al.Physica status solidi C:conferences,ZnSe-based laser diodes[J].New Approaches,2005,2(03):1098.
[4] Wenisch H.;Klude M.;Ohkawa K.;Hommel D.;Fehrer M. .Internal photoluminescence in ZnSe homoepitaxy and application in blue-green-orange mixed-color light-emitting diodes[J].Journal of Crystal Growth,2000(0):1075-1079.
[5] Wen Ray Chen;Chien Jung Huang .ZnSe-Based Mixed-Color LEDs[J].IEEE Photonics Technology Letters,2004(5):1259-1261.
[6] Nakamura T;Katayama K;Mori H;Fujiwara S .Novel cladding structure for ZnSe-based white LEDs with longer lifetime over 10,000 hours[J].Physica status solidi, B. Basic research,2004(12):2659-2663.
[7] Tsuguru Shirakawa .Effect of defects on the degradation of ZnSe-based white LEDs[J].Mater Sci Eng B:Solid-State Mater for Adv Techn,2002,91-92:470.
[8] Katayama K.;Nakanishi F.;Nakamura T.;Doi H.;Saegusa A. Mitsui T.;Matsuoka T.;Irikura M.;Takebe T.;Nishine S.;Shirakawa T.;Matsubara H. .ZnSe-based white LEDs[J].Journal of Crystal Growth,2000(0):1064-1070.
[9] 卢利平,刘景和,李建立,万玉春,张亮,曾繁明.ZnSe单晶生长及性能研究[J].人工晶体学报,2005(02):215-218.
[10] 杨遇春 .ZnSe红外窗口材料及体单晶的制造与用途[J].稀有金属,1992,16(05):364.
[11] Liu Dali;Li Zhenhua;Li Gongyu et al.Optical bistability in ZnS/ZnSe stratified grating wave filter[J].PROCEEDINGS OF SPIE-THE INTERNATIONAL SOCIETY FOR,2001,4602:166.
[12] 陈明,李淳飞,徐迈,王维彪,夏玉学,马少杰.非线性一维光子晶体光开关与光双稳[J].光子学报,2005(01):98-101.
[13] Ryzhikov V;Starzhinskiy N;Galchinetskii L et al.New semiconductor scintillators ZnSe(Te,O) and integrated radiation detectors based thereon[J].IEEE Transactions on Nuclear Science,2001,48(3Ⅰ):356.
[14] Vigue F.;Faurie JP.;Monroy E.;Calle F.;Munoz E.;de Mierry P. .High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range[J].Electronics Letters,2000(9):826-827.
[15] Gene Cantwell;Harsch W C;Cotal H L et al.Growth and characterization of substrate-quality ZnSe single crystals using seeded physical vapor transport[J].Journal of Applied Physics,1992,71(06):2931.
[16] 吴雅颂 .硒化锌的光学应用及其单晶研制发展概况[J].云南冶金,1997,26(06):46.
[17] 杨学明.ZnSe晶体的物理汽相沉积生长[J].人工晶体学报,1988(02):92.
[18] 李焕勇,介万奇.一维ZnSe半导体纳米材料的制备与特性[J].半导体学报,2003(01):58-62.
[19] Dong Yajie;Peng Qing;Li Yadong .Semiconductor zinc chalcogenides nanofibers from 1-D molecular precursors[J].Inorg Chem Commu,2004,7:370.
[20] 曹传宝,刘思远,吕瑞涛,李敬华,朱鹤荪.ZnSe纳米棒的一步水热法制备及其表征[J].北京理工大学学报,2004(10):932-934.
[21] Wang HN;Du FL .Hydrothermal synthesis of ZnSe hollow micropheres[J].Crystal Research and Technology: Journal of Experimental and Industrial Crystallography,2006(4):323-327.
[22] 钟兴厚;萧文锦;袁启华.无机化学丛书[M].北京:科学出版社,1995:728.
[23] 王向阳,方珍意,蔡以超,张力强,肖红涛.CVD法生长ZnSe的工艺分析[J].人工晶体学报,2004(02):235-237.
[24] 杨曜源,方珍意,蔡以超,王向阳,张力强,肖红涛,田鸿昌,东艳萍,李卫,郝永亮.化学气相沉积法生长透明硒化锌多晶[J].硅酸盐学报,2004(08):946-949.
[25] 周育先,方珍意,潘伟,杨曜源,张力强,王向阳,肖红涛.低压化学气相沉积法制备ZnSe多晶及其性能研究[J].稀有金属材料与工程,2005(02):306-308.
[26] Hiroyuki Kato;Isao Kikuma .Effect of seed annealing on ZnSe single-crystals grown by vertical sublimation method[J].Journal of Crystal Growth,2000,212(1-2):92.
[27] Namikawa Y.;Kotani T.;Fujiwara S. .Al diffused conductive ZnSe substrates grown by physical vapor transport method[J].Journal of Crystal Growth,2001(1):92-97.
[28] Kato H.;Kikuma I.;Udono H. .Growth and characterization of Br-doped ZnSe single crystals grown by a vertical sublimation method[J].Journal of Crystal Growth,2001(1):79-86.
[29] Shinsuke Fujiwara;Yasuo Namikawa;Takao Nakamura et al.Growth of large ZnSe single crystal by R-CVT method[J].Journal of Crystal Growth,2005,275(1-2):e415.
[30] 张旭,李卫,张力强,丁进,王坤.低位错ZnSe单晶的生长[J].人工晶体学报,2006(02):385-387.
[31] 周永溶.半导体材料[M].北京:北京理工大学出版社,1992:191.
[32] 王季陶;刘明登.半导体材料[M].北京:高等教育出版社,1990:533.
[33] Mycielski A.;Szadkowski AJ.;Kowalczyk L.;Zielinski M.;Lusakowska E. Witkowska B.;Kaliszek W.;Jedrzejczak A.;Adamczewska J.;Kaczor P. Chernyshova M. .Technology and characterization of single-crystalline substrates made of ZnSe-based wide-gap II-VI semiconductor compounds[J].Physica status solidi, B. Basic research,2002(1):189-192.
[34] 黄锡珉 .制备高纯度Ⅱ-Ⅵ族化合物的新方法[P].CN 85101849A,1986.
[35] 王吉丰;黄锡珉 .用改进升华方法生长ZnSe单晶[J].人工晶体学报,1990,19(03):212.
[36] Sankar N.;Ramachandran K.;Sanjeeviraja C. .Growth and characterization of ZnSe and phosphorus-doped ZnSe single crystals[J].Journal of Crystal Growth,2002(1/4):195-200.
[37] [OL].http://www.Shtong.Gov.Cn
[38] 吴洪才 .一种硒化锌(ZnSe)粉末材料的制备方法[P].CN 1483665A,2004.
[39] 王锋,常芳娥,坚增运,惠增哲,程萍,龙伟.ZnSe晶体制备的工艺研究[J].西安工业学院学报,2005(01):61-63,67.
[40] Korostelin Yu V;Kozlovsky V I .Vapour growth of Ⅱ-Ⅵsolid solution single crystals by contact-free technique[J].Journal of Alloys and Compounds,2004,371(1-2):25.
[41] Li Huanyong;Jie Wanqi .Growth and characterizations of bulk ZnSe single crystal by chemical vapor transport[J].Journal of Crystal Growth,2003,257(1-2):110.
[42] Reisman A;Berkenblit M .The non-detonative synthesis of cadmium selenide and other Ⅱ-Ⅵ compounds from the elements[J].Physical Chemistry,1963,67:22.
[43] Rudolph P;Schafer N;Fukudu T .Crystal growth of ZnSe from the melt[J].Material Science and Engineering,1995,R15:85.
[44] 李焕勇 .ZnSe晶体的气相生长与光电特性研究[D].西北工业大学,2003.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%