锑化物激光器在2～5μm波段具有广阔的应用前景.综述了锑化物激光器的研究进展,重点论述了材料生长、结构设计、器件工艺、封装技术以及新的器件结构,讨论了其中存在的主要技术问题,并指出了锑化物激光器不断向长波长方向扩展的趋势.
参考文献
| [1] | Werle P .A review of recent advances in semiconductor laser based gas monitor[J].Spectrochem Acta A Mol Bimol Spectrosc,1998,54(02):197. |
| [2] | Dolginov L M;Druzhinina L V;Eliseev P G et al.New uncooled injection heterolaser emitting in the 1.5～1.8μm range[J].Soviet Journal of Quantum Electronics,1976,6:257. |
| [3] | Kabayashi;Hiroshi Y;Uemura C .Room temperature operation of the InGaAsSb/AlGaAsSb DH laser at 1.8μm wavelength[J].Japanese Journal of Applied Physics,1980,19(01):L30. |
| [4] | Chiu T H;Tsang W T;Ditzenberger J A et al.Room temperature operation of InGaAsSb/AlGaAsSb double heterostructure laser near 2.2μm prepared by molecular beam epitaxy[J].Applied Physics Letters,1986,49:1051. |
| [5] | Choi H K;Eglash S J .High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1μm with low threshold current density[J].Applied Physics Letters,1992,61:1154. |
| [6] | Lee H;York P K;Menna R J et al.Room-temperature2.78μm AlGaAsSb/InGaAsSb quantum-well lasers[J].Applied Physics Letters,1995,66:1942. |
| [7] | Choi H K;Turner G W;Walpole J N et al.Low-threshold,high-power,high-brightness GaInAsSb/AlGaAsSb quanturn-well lasers emitting at 2.05μm[J].Proceedings of Spie,1998,3284:268. |
| [8] | Zhang YG.;Zheng YL.;Lin C.;Jian GZ.;Li AZ. .MBE grown 2.0 mu m InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes[J].Journal of Crystal Growth,2001(0):582-585. |
| [9] | ZHANG Yong-Gang,ZHENG Yan-Lan,LIN Chun,LI Ai-Zhen,LIU Sheng.Continuous Wave Performance and Tunability of MBE Grown 2.1μm InGaAsSb/AlGaAsSb MQW lasers[J].中国物理快报（英文版）,2006(08):2262-2265. |
| [10] | C. Mermelstein;S. Simanowski;M. Mayer .Room-temperature low-threshold low-loss continuous-wave operation of 2.26 μm GaInAsSb/AlGaAsSb quantum-well laser diodes[J].Applied physics letters,2000(11):1581-1583. |
| [11] | R Hanfoug;A Salesse;D A Yarekha .Use of AlOx in cladding layers of an antimonide laser structure emitting at 2.3μm[J].Semiconductor Science and Technology,2001(11):936-938. |
| [12] | Grau M.;Lin C.;Amann MC. .Low threshold 2.72 mu m GalnAsSb/AlGaAsSb multiple-quantum-well laser[J].Electronics Letters,2002(25):1678-1679. |
| [13] | Kim J G;Shterengas L;Martinelli R U et al.High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode laser[J].Applied Physics Letters,2003,83(10):1926. |
| [14] | Shterengas L;Belenky G L;Kim J G et al.Design of highpower room-temperature continuous-wave GaSh-based typeI quantum-well lasers with λ＞2.5μm[J].Semiconductor Science and Technology,2004,19(05):655. |
| [15] | Grau M;Lin C;Dier O et al.Room-temperature operation of 3.26μm GaSb-based type-Ⅰ lasers with quinternary AlGaInAsSb barriers[J].Applied Physics Letters,2005,87:241104. |
| [16] | Menna R;Garbuzov D Z;Lee H et al.High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum-well diode lasers emitting at 2μm[J].Proceedings of Spie,1998,3284:238. |
| [17] | Desalvo G C;Kaspi R;Bozado C A .Citric acid etching of GaAs1-xSbx,Al0.5 Ga0.5 Sb,and InAs for heterostructure device fabrication[J].Journal of the Electrochemical Society,1994,141:3526. |
| [18] | Pearton J;Hobson W S;Baiocchi F A et al.Reactive ion etching of InAs,InSb and GaSb in CCl2F2/O2 and C2H6/H2[J].Journal of the Electrochemical Society,1990,137(06):1924. |
| [19] | Maeda;Lee J W;Shul R J et al.Inductively coupled plasma etching of Ⅲ-Ⅴ semiconductors in BCl3-based chemistries[J].Applied Surface Science,1999,143:174. |
| [20] | Mileham J R;Lee J W;Lambers E S et al.Dry etching of GaSb and InSb in CH4/H2/Ar[J].Semiconductor Science and Technology,1997,12:338. |
| [21] | Zhang L;Lester L F;Shui R J et al.Inductively coupled plasma etching of Ⅲ-Ⅴ antimonides in BCl3/Ar and Cl2/Ar[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1999,17(03):965. |
| [22] | HONG Ting,ZHANG Yong-gang,LIU Tian-dong.Reactive Ion Etching of GaAs, GaSb, InP and InAs in Cl2/Ar Plasma[J].半导体光子学与技术(英文版),2004(03):203-207. |
| [23] | Hong T;Zhang Y G;Liu T D et al.BCl3/Ar inductively coupled plasma etching of GaSb and related materials for quaternary antimonide laser diodes[J].Journal of the Electrochemical Society,2005,152(05):372. |
| [24] | Zhu C;Zhang Y G;Li A Z et al.Comparison of thermal characteristics of antimonide and phosphide MQW lasers[J].Semiconductor Sci Techn,2005,20:563. |
| [25] | Zhu C;Zhang YG;Li AZ;Zheng YL;Tang T .Heat management of MBE-grown antimonide lasers[J].Journal of Crystal Growth,2005(1/4):173-177. |
| [26] | Bradshaw JL.;Breznay NP.;Bruno JD.;Gomes JM.;Pham JT.;Towner FJ. Wortman DE.;Tober RL.;Monroy CJ.;Olver KA. .Recent progress in the development of type II interband cascade lasers[J].Physica, E. Low-dimensional systems & nanostructures,2004(3/4):479-485. |
| [27] | Bleuel T;Muller M;Forchel A .2μm GaInSb-AlGaAsSb distributed-feedback lasers[J].IEEE Photonics Technology Letters,2001,13(06):553. |
| [28] | M. Hummer;K. Rossner;A. Benkert;A. Forchel .GaInAsSb-AlGaAsSb Distributed Feedback Lasers Emitting Near 2.4 μm[J].IEEE Photonics Technology Letters,2004(2):380-382. |
| [29] | Bewley WW.;Aifer EH.;Vurgaftman I.;Olafsen LJ.;Meyer JR. Lee H.;Martinelli RU.;Connolly JC.;Sugg AR.;Olsen GH.;Yang MJ. Bennett BR.;Shanabrook BV.;Felix CL. .Above-room-temperature optically pumped midinfrared W lasers[J].Applied physics letters,1998(26):3833-3835. |
| [30] | Felix C.L.;Olafsen L.J.;Stokes D.W.;Aifer E.H.;Vurgaftman I.;Meyer J.R.;Yang M.J.;Bewley W.W. .Continuous-wave type-II 'W' lasers emitting at λ = 5.4-7.1 µm[J].IEEE Photonics Technology Letters,1999(8):964-966. |
| [31] | Yang R.Q.;Lin C.-H. .Mid-IR interband cascade electroluminescence in type-II quantum wells[J].Electronics Letters,1996(17):1621-1622. |
| [32] | Yang RQ;Lin CH;Murry SJ;Pei SS;Liu HC;Buchanan M;Dupont E;QET INC HOUSTON TX. .Interband cascade light emitting diodes in the 5-8 mu m spectrum region[J].Applied physics letters,1997(15):2013-2015. |
| [33] | Yang R Q;Bruno J D;Bradshaw J L et al.Interband cascade lasers:progress and challenges[J].Physica E,2000,69:1256. |
| [34] | Bradshaw J L;Bruno J D;Pham J T et al.Continuous wave operation of type-Ⅱ interband cascade lasers[J].IEE Proceedings-Optoelectronics,2000,147(03):177. |
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