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  4. Ge/Si量子点生长的研究进展

材料导报, 2010, 24(19): 117-122.

Ge/Si量子点生长的研究进展

鲁植全 1, , 王茺 2, , 杨宇 3,

1.云南大学光电信息材料研究所,昆明650091

2.云南大学光电信息材料研究所,昆明650091

3.云南大学光电信息材料研究所,昆明650091

基金项目:   教育部科学技术研究重点项目   国家自然科学基金(10964016)   云南省自然基金重点项目(2008CC012)  

关键词： Ge/Si量子点生长 , 图形衬底 , 表面原子掺杂 , 超薄SiO2层 , Ge组分

Advance in the Growth of Ge/Si Quantum Dots

回顾了近年来在Ge/Si量子点生长方面的研究进展.主要讨论了为了提高量子点空间分布有序性、增大量子点的密度、减小量子点的尺寸及改善其分布均匀性而采取的各种方法,如图形衬底辅助生长、表面原子掺杂及利用超薄SiO2层辅助生长等,以及Ge量子点的演变及组分变化.

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