欢迎登录材料期刊网

材料期刊网

高级检索

综述了氮化硅在微电子中的应用、制备,阐述了用氮气直接氮化的影响因素、膜生长的机理和动力学,以及未来的研究方向.

参考文献

[1] Anatoly Rosenflanz.[J].Solid State and Materials Science,1999(04):453.
[2] Chen S-M;Shannon J M;Gwilliam R M et al.[J].Surface and Coatings Technology,1997,93:269.
[3] Takshi Ito;Tetsuo Madkmura .[J].IEEE Transactions on Electron Devices,1982,ED-29(04):498.
[4] 王淦,杨德仁,李东升,杨辉,李立本,阙端麟.用三点弯方法研究微氮硅单晶机械强度[J].半导体学报,2001(03):304-308.
[5] Ammon W von;Hlzl R;Virbulis J et al.[J].Journal of Crystal Growth,2001,226:19.
[6] 阙端麟;李立本;林玉瓶 .[P].中国专利:85100285
[7] 阙端麟;李立本.[J].中国科学A辑,1991(02):215.
[8] Gusev E P;Lu H C et al.[J].IBM Journal of Research and Development,1999,43(03):265.
[9] Turkdogan E T;Patricia M Bills.[J].Russian Journal of Applied Chemistry,1958
[10] Stanley W Polchopek;Gary H Bernstein .[J].IEEE Trans Elctron,1993,40:385.
[11] Chu T L;Lee C H;Gruber G A .[J].Journal of the Electrochemical Society,1967,114(07):717.
[12] Wu J D et al.[J].Thin Solid Films,1999,350:101.
[13] Schmid P.;Vogt M.;Orfert M. .Plasma deposition of Si-N and Si-O passivation layers on three-dimensional sensor devices[J].Surface & Coatings Technology,1998(1/3):1510-1517.
[14] Suchaneck G.;Gerlach G.;Norkus V. .Low-temperature PECVD-deposited silicon nitride thin films for sensor applications[J].Surface & Coatings Technology,2001(0):808-812.
[15] Patil S J et al.[J].真空,2000,65:91.
[16] CHANG;Feg Wen Liou Tzong Horng et al.[J].Thermochimica Acta,2000,354:71.
[17] Mientus R;Ellmer K .[J].Surface and Coatings Technology,1999,116-119:1093.
[18] Moslehi M;Han C;Saraswat K et al.[J].Journal of the Electrochemical Society,1985,132:2190.
[19] 李立本;孙贵如;冯艳丽 等.[J].浙江大学学报(工学版),1991,25(05):499.
[20] Wang X S;Zhai G;Yang J et al.[J].Surface Science Spectra,2001,494:83.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%