Analysis of the Vertical and Lateral Interactions in a Multisheet Array of InAs/GaAs Quantum Dots

材料科学技术（英文）, 2009, 25(5): 677-680.

^1, , ^2,

1.School of Engineering, Sun Yat-Sen University, Guangzhou 510275, China;Guangdong Provincial Academy of Building Research, Guangzhou 510500, China

2.School of Engineering, Sun Yat-Sen University, Guangzhou 510275, China

基金项目: The project is supported by the National Natural Science Foundation of China(10572155;10732100) The Ministry of Education of China Guangdong Science and Technology Bureau(2006A11001002)

Analysis of the Vertical and Lateral Interactions in a Multisheet Array of InAs/GaAs Quantum Dots

Hui She ^1, , Biao Wang ^2,

1.School of Engineering, Sun Yat-Sen University, Guangzhou 510275, China;Guangdong Provincial Academy of Building Research, Guangzhou 510500, China

2.School of Engineering, Sun Yat-Sen University, Guangzhou 510275, China

Keywords： Quantum dots

The vertical and lateral interactions in a multisheet array of InAs/GaAs quantum dots are analyzed by finite element method (FEM). It is shown that due to the effects of vertical interaction, nucleation prefers to happen above buried quantum dots (QDs). Mearwhile, the effects of lateral interaction adjust the spacing of lateral neighboring QDs. The vertical coupling becomes strong with deceasing GaAs spacer height and increasing number of buried layers, while the lateral coupling becomes strong with increasing InAs wetting layer thickness. The phenomenon that, after successive layers, the spacing and size of QDs islands become progressively more uniform is explained according to the minimum potential energy theory.

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Analysis of the Vertical and Lateral Interactions in a Multisheet Array of InAs/GaAs Quantum Dots

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