采用连续离子层吸附反应(SILAR)法,通过500℃退火在玻璃衬底上制备出AgGaS2纳米薄膜.使用X射线衍射(XRD)、扫描电镜(SEM)、X射线能谱(EDS)、紫外可见(UV-Vis)谱和光致发光(PL)谱等对纳米薄膜的物相、形貌、化学配比和光学性能进行了定性和定量表征.XRD测试结果表明,实验获得产物为黄铜矿结构AgGaS2,并观测到(112)面和(224)面.使用Scherrer公式估算了AgGaS2产物的晶粒平均粒度大小约为30 nm.SEM观测到的AgGaS2纳米薄膜外形均匀一致,沉积紧密,薄膜沉积的纳米平均颗粒直径约为18～ 26 nm.EDS测试结果显示AgGaS2纳米薄膜中Ag、Ga和S三元素的原子相对百分含量为25.12％,26.66％和49.93％,其化学计量比几近于1∶1∶2物质的量比.通过紫外可见透过光谱得到截止波长为470.1 nm,禁带宽度为2.64 eV.室温PL测试发现发光中心在456 nm,与AgGaS2晶体发光中心相比产生了约40nm的蓝移.以上结果充分表明SILAR法是一种制备AgGaS2纳米薄膜的有效方式.
参考文献
| [1] | Shirakata S.;Terasako T.;Niwa E.;Masumoto K. .Photoluminescence of AgGaS2 and CuGaS2 doped with rare-earth impurities[J].The journal of physics and chemistry of solids,2003(9/10):1801-1805. |
| [2] | Chen, BJ;Zhu, SF;Zhao, BJ;Lei, YB;Wu, XJ;Yuan, ZR;He, ZY .Differential thermal analysis and crystal growth of AgGaS2[J].Journal of Crystal Growth,2008(3):635-638. |
| [3] | Johan P;Michel B;Jean C D .Highly Transparent AgGaS2 Single Crystals,a Compound for Mid-IR laser Sources,Using a Combined Static/ dynamic Vacuum Annealing Method[J].Materials Chemistry and Physics,2010,119(1-2):1-3. |
| [4] | Jianjun Zhang;Shifu Zhu;Beijun Zhao;Baojun Chen;Zhiyu He .A new method of synthesis on high-quality AgGaS2 polycrystalline[J].Current applied physics: the official journal of the Korean Physical Society,2010(2):544-547. |
| [5] | H. Karaagac;M. Parlak .The investigation of structural, electrical, and optical properties of thermal evaporated AgGaS_2 thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2011(7):2055-2061. |
| [6] | 袁泽锐,朱世富,赵北君,陈宝军,何知宇,杨胜伟.石英安瓿下降法生长硫镓银晶体的研究[J].人工晶体学报,2009(01):11-15. |
| [7] | Daibin Kuang;Anwu Xu;Yueping Fang;Hanqin Liu;Christoph Frommen;Dieter Fenske .Surfactant-Assisted Growth of Novel PbS Dendritic Nanostructures via Facile Hydrothermal Process[J].Advanced Materials,2003(20):1747-1750. |
| [8] | Aytunc Ates;M. Ali Yildirim;Mutlu Kundakcl;Aykut Astam .Annealing and light effect on optical and electrical properties of ZnS thin films grown with the SILAR method[J].Materials science in semiconductor processing,2007(6):281-286. |
| [9] | Kundakci M;Ates A;Astam A;Yidirim M .Structural, optical and electrical properties of CdS, Cd0.5In0.5S and In2S3 thin films grown by SILAR method[J].Physica, E. Low-dimensional systems & nanostructures,2008(3):600-605. |
| [10] | Biswajit Ghosh;Madhumita Das;Pushan Banerjee;Subrata Das .Fabrication and optical properties of SnS thin films by SILAR method[J].Applied Surface Science,2008(20):6436-6440. |
| [11] | C. Vargas-Hernandez;F.N. Jimenez-Garcia;J.F. Jurado;V. Henao Granada .Comparison Of Zno Thin Films Deposited By Three Different Silar Processes[J].Microelectronics journal,2008(11):1349-1350. |
| [12] | A.M. More;J.L. Gunjakar;C.D. Lokhande;Oh Shim Joo .Fabrication Of Hydrophobic Surface Of Titanium Dioxide Films By Successive Ionic Layer Adsorption And Reaction (silar) Method[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2009(12):6067-6072. |
| [13] | Synthesis and characterization of β-Ni(OH)_2 up grown nanoflakes by SILAR method[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2009(20):8648-8653. |
| [14] | Irene Barcelo;Teresa Lana-Villarreal;Roberto Gomez .Efficient sensitization of ZnO nanoporous films with CdSe QDs grown by Successive Ionic Layer Adsorption and Reaction (SILAR)[J].Journal of Photochemistry and Photobiology, A. Chemistry,2011(1):47-53. |
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