利用偏振差分透射谱测量了2英寸圆形GaAs晶片、自支撑GaN衬底和蓝宝石衬底等的双折射分布,通过弹光效应换算得到了晶片内部残余应力分布.测量得到的应力反映的是晶片各个点的[110]和[110]方向的应变差.实验测量得到的GaAs晶片和自支撑GaN 衬底的[110] 和[110]的应变差最大可以达到10-5数量级.蓝宝石衬底的可以达到10-6数量级.因此TDS可以对透明或者半透明晶片的应力分布实现快速、实时、无损、高灵敏度检测.
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