HWCVD在玻璃衬底上沉积硅薄膜的研究

材料导报, 2010, 24(z1): 288-290.

1.兰州大学物理科学与技术学院,兰州,730000

2.兰州大学物理科学与技术学院,兰州,730000

3.兰州大学物理科学与技术学院,兰州,730000

4.兰州大学物理科学与技术学院,兰州,730000

5.兰州大学物理科学与技术学院,兰州,730000

基金项目: 国家基础科学人才培养基金(NFFTBS No.J0630313)

Study of the Silicon Film Prepared by HWCVD on Glass Substrate

采用热丝化学气相沉积法在玻璃衬底上沉积硅薄膜,采用扫描电子显微镜、拉曼光谱分析表征样品的形貌和结晶性,较为系统地研究了硅烷浓度、衬底到热丝的距离对硅薄膜生长过程及各种性质的影响,结果表明,较高的衬底温度及较低的硅烷浓度有利于薄膜的结晶.

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