论述了利用分子束外延方法在InAs(001)基片上生长InAs时,样品表面由富As的(2×4)向富In的(4×2)转变的现象.通过控制生长参数生长出了较好的富As(2×4)表面.在As压不足的情况下,轻微的提升样品衬底温度,样品表面逐渐转向富In表面的(4×2)结构,呈现出(3×1)混合相.通过实验分析及软件模拟确定表面(4×2)结构区域已覆盖多达90％,表明样品表面大部分已金属化.
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