InN材料及器件的最新研究进展

材料导报, 2007, 21(6): 16-20.

InN材料及器件的最新研究进展

丁少锋 ^1, , 范广涵 ^2, , 李述体 ^3, , 郑树文 ^4, , 陈琨 ^5,

1.华南师范大学光电子材料与技术研究所,广州,510631

2.华南师范大学光电子材料与技术研究所,广州,510631

3.华南师范大学光电子材料与技术研究所,广州,510631

4.华南师范大学光电子材料与技术研究所,广州,510631

5.华南师范大学光电子材料与技术研究所,广州,510631

基金项目: 广东省广州市科技攻关项目(2005Z1-D0071) 国家自然科学基金(50602018) 广东省科技攻关计划(2006A10802001) 广东省自然科学基金(06025083)

关键词： InN , 特性 , 应用 , 进展

Research Progress in InN-based Semiconductor Material and Device

InN材料是性能优良的Ⅲ-Ⅴ族氮化物半导体材料,在光电子领域有着非常重要的应用价值,由此成为最近国际国内研究的热点.就InN材料的制备方法、p型掺杂、电学特性、光学特性、器件的研究应用以及国内研究的最新进展进行了综述.

参考文献

[1]	Wu J et al.Unusual properties of the fundamental band gap of InN[J].Applied Physics Letters,2002,80:3967.
[2]	Gallinat C S et al.In-polar InN grown by plasma-assisted molecular beam epitaxy[J].Applied Physics Letters,2006,89:032109.
[3]	Koblm(u)lle G et al.Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy[J].Applied Physics Letters,2006,89:071902.
[4]	Polyakov V M;Schwierz F .Low-field electron mobility in wurtzite InN[J].Applied Physics Letters,2006,88:032101.
[5]	O'Leary SK.;Shur MS.;Bhapkar UV.;Eastman LF.;Foutz BE. .Electron transport in wurtzite indium nitride[J].Journal of Applied Physics,1998(2):826-829.
[6]	Fu, SP;Chen, YF .Effective mass of InN epilayers[J].Applied Physics Letters,2004(9):1523-1525.
[7]	Schaff W J;Hai L;Jeonghyun H.High Performance Devices[A].,2000:225.
[8]	Lu H;Schaff WJ;Eastman LF .Surface chemical modification of InN for sensor applications[J].Journal of Applied Physics,2004(6):3577-3579.
[9]	Yamamoto A;Tsujino M;Ohkubo M et al.Metalorganic chemical vapor deposition growth of InN for InN/Si tandem solar cell[J].Solar Energy Materials and Solar Cells,1994,35:53.
[10]	Yoshimoto M;Yammamoto Y;Saraie J.Fabrication of InN/ Si heterojunctions with rectifying characteristics[J].Physica Status Solidi,2003(07):2794.
[11]	Neudecker B J;Zuhr R A .Intercalation compounds for battery materials[J].Electro Chem Soc Proc,2000,99(24):295.
[12]	Yamaguchi S et al.Thermoelectric devices using InN and Al1-xInxN thin films prepared by reactive radio-frequency sputtering[J].Applied Physics Letters,2004,84:5344.
[13]	Ascazubi R;Wilke I et al.Terahertz emission by InN[J].Applied Physics Letters,2004,84:4810.
[14]	Ren F;Abernathy C R;Chu S N et al.Use of InN for ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors[J].Applied Physics Letters,1995,66:1503.
[15]	Donovan SM;MacKenzie JD;Abernathy CR;Pearton SJ;Ren F;Jones K;Cole M;USA RES LAB FT MONMOUTH NJ 07703. .InN-based ohmic contacts to InAlN[J].Applied physics letters,1997(19):2592-2594.
[16]	Chen N C;Chang P H;Wang Y N et al.Schottky behavior at InN-GaN interface[J].Applied Physics Letters,2005,87:212111.
[17]	Moussa R;Aourag H;Dufour J P et al.Nitride compounds as photonic crystals in the optical region[J].Journal of Materials Science:Materials in Electronics,2000,11:623.
[18]	Davydov V Yu;Golubev V G;Kartenko N F et al.Fabrication and structural studies of opal-Ⅲ nitride nanocomposites[J].Nano-Technology,2000,11:291.
[19]	Indium nitride (InN): A review on growth, characterization, and properties[J].Journal of Applied Physics,2003(5):2779-2808.
[20]	Singha P;Ruterana P;Morales M et al.Structural and optical characterisation of InN layers grown by MOCVD[J].Superlattices and Microstructures,2004,36:537.
[21]	Alevli M;Durkaya G;Weerasekara A et al.Characterization of InN layers grown by high-pressure chemical vapor deposition[J].Applied Physics Letters,2006,89:112119.
[22]	Shinoda H;Mutsukura N .Structural and optical properties of InN films prepared by radio frequency magnetron sputtering[J].Thin Solid Films,2006,503:8.
[23]	Suihkonen S;Sormunen J;Rangel-Kuoppa VT;Koskenvaara H;Sopanen M .Growth of InN by vertical flow MOVPE[J].Journal of Crystal Growth,2006(1):8-11.
[24]	Briot O;Maleyre B;Ruffenach S;Gil B;Pinquier C;Demangeot F;Frandon J .Absorption and Raman scattering processes in InN films and dots[J].Journal of Crystal Growth,2004(1):22-28.
[25]	Uesaka Y;Yamamoto A;Hashimoto A .Band gap widening of MBE grown InN layers by impurity incorporation[J].Journal of Crystal Growth,2005(1/4):402-405.
[26]	Walukiewicz W;Li SX;Wu J;Yu KM;Ager JW;Haller EE;Lu H;Schaff WJ .Optical properties and electronic structure of InN and In-rich group III-nitride alloys[J].Journal of Crystal Growth,2004(1):119-127.
[27]	Monemar B;Paskova P P;Kasic A .Optical properties of InN the bandgap question superlattices and microstures[J].Superlattices and Microsturctures,2005,38:38.
[28]	Chen PP;Makino H;Li TX;Wang JB;Lu W;Yao T .Optical properties of InN films grown by molecular beam epitaxy at different conditions[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):166-169.
[29]	Li S X;Yu K M;Wu J et al.Fermi-level stabilization energy in group Ⅲ nitrides[J].Physical Review B:Condensed Matter,2005,71s:161201.
[30]	Piper L F J;Veal T D;McConville C F .Origin of the n-type conductivity of InN:The role of positively charged dislocations[J].Applied Physics Letters,2006,88:252109.
[31]	Walukiewicz W. .Intrinsic limitations to the doping of wide-gap semiconductors[J].Physica, B. Condensed Matter,2001(0):123-134.
[32]	Mahboob I et al.Origin of electron accumulation at wurtzite InN surfaces[J].Physical Review B:Condensed Matter,2004,69:201307.
[33]	Obloh H.;Kaufmann U.;Kunzer M.;Maier M.;Ramakrishnan A. Schlotter P.;Bachem KH. .Self-compensation in Mg doped p-type GaN grown by MOCVD[J].Journal of Crystal Growth,1998(1/4):270-273.
[34]	Jones RE;Yu KM;Li SX;Walukiewicz W;Ager JW;Haller EE;Lu H;Schaff WJ .Evidence for p-type doping of InN[J].Physical review letters,2006(12):5505-1-5505-4-0.
[35]	Anderson P A;Swartz C H;Carder D et al.Buried p-type layers in Mg-doped InN[J].Applied Physics Letters,2006,89:184104.
[36]	Davydov V Yu;Klochikhin A A;Seisyan R P et al.Absorption and emission of hexagonal InN evidence of narrow fundamental band gap[J].Physical Status Solidi B Basic Research,2002,229:rl.
[37]	Klochikhin AA;Davydov VY;Emtsev VV;Sakharov AV;Kapitonov VA;Andreev BA;Lu H;Schaff WJ .Acceptor states in the photoluminescence spectra of n-InN[J].Physical review, B. Condensed matter and materials physics,2005(19):5207-1-5207-16-0.
[38]	Davydov V Yu et al.Comparison of the quantum efficiencies of interwell and intrawell radiative transitions in quantum cascade lasers[J].Applied Physics Letters,1999,75:3297.
[39]	Fu SP;Chen YF;Tan KW .Recombination mechanism of photoluminescence in InN epilayers[J].Solid State Communications,2006(4):203-207.
[40]	Trybus E;Namkoong G;Henderson W;Burnham S;Doolittle WA;Cheung M;Cartwright A .InN: A material with photovoltaic promise and challenges[J].Journal of Crystal Growth,2006(2):218-224.
[41]	Pacebutas V et al.Optical bleaching effect in InN epitaxial layers[J].Applied Physics Letters,2006,88:191109.
[42]	Ohashi T et al.High structural quality InN/Ino.75 Gao.25 N multiple quantum wells grown by molecular beam epitaxy[J].Applied Physics Letters,2006,89:041907.
[43]	沈学础.半导体光谱和光学性质[M].上海:上海科学出版社,2003:43.
[44]	Xie Z L;Zhang R;Liu B et al.The high mobility InN film grown by MOCVD with GaN buffer layer[J].Journal of Crystal Growth,2007,298:409.

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InN材料及器件的最新研究进展

Research Progress in InN-based Semiconductor Material and Device

参考文献