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PbI2 单晶体是性能优异的室温半导体核辐射探测器新材料.主要介绍了PbI2 晶体生长技术及其室温核辐射探测器研究发展的最新动态,综述了PbI2 晶体的3种主要生长方法(气相法、熔体法和凝胶法)的原理和优缺点,重点阐述了熔体法生长PbI2 晶体的影响因素及研究进展,提出了PbI2 单晶制备技术存在的主要问题和今后的发展方向.

参考文献

[1] 丁洪林.核辐射探测器[M].哈尔滨:哈尔滨工程大学出版社,2010:318.
[2] Novosad S S;Novosad I S;Matviishin I M .Luminescence and photosensitivity of PbI2 crystals[J].Inorganic Materials,2002,38(10):1253.
[3] Lund J C;Shah K S;Squillante M R et al.Properties of lead iodide semiconductor radiation detectors[J].Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,1989,283:299.
[4] Ahuja R.;Arwin H.;da Silva AF.;Persson C.;Osorio-Guillen JM.;de Almeida JS.;Araujo CM.;Veje E.;Veissid N.;An CY.;Pepe I.;Johansson B. .Electronic and optical properties of lead iodide[J].Journal of Applied Physics,2002(12):7219-7224.
[5] Fornaro L.;Saucedo E.;Mussio L.;Gancharov A. .Toward epitaxial lead-iodide films for X-ray digital imaging[J].IEEE Transactions on Nuclear Science,2002(5):2274-2278.
[6] 朱世富,赵北君,王瑞林,高德友,韦永林.室温半导体核辐射探测器新材料及其器件研究[J].人工晶体学报,2004(01):6-12.
[7] Schieber M.;Olsen RW.;Mcgregor DS.;Vanscyoc JM.;James RB. Soria E.;Bauser E.;Lund JC. .MATERIAL PROPERTIES AND ROOM-TEMPERATURE NUCLEAR DETECTOR RESPONSE OF WIDE BANDGAP SEMICONDUCTORS[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,1996(2/3):492-495.
[8] 何知宇,赵北君,朱世富,叶林森,钟雨航,王立苗,杨慧光,曾体贤.CdSe晶片的红外透过率研究[J].人工晶体学报,2007(06):1211-1214.
[9] 于晖,介万奇,查钢强,杜园园,王涛,徐亚东.CdZnTe平面核辐射探测器研究[J].人工晶体学报,2009(03):620-624.
[10] Kutny V E;Rybka A V;Abyzov A S et al.AlSb single crystal grown by HPBM[J].Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,2001,458:448.
[11] 赵欣 .碘化铅(PbI<,2>)单晶体生长研究[D].西华大学,2006.
[12] Klintenberg MK.;Weber MJ.;Derenzo DE. .Luminescence and scintillation of PbI2 and HgI2[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2003(0):287-290.
[13] Matuchova M;Prochazkova O;Zdansky K et al.Prepara-tion of lead iodide as input material for X-ray detectors[J].Materials Science Forum,2005,480-481:477.
[14] Zhu XH;Zhao BJ;Zhu SF;Jin YR;He ZY;Zhang JJ;Huang Y .Synthesis and characterization of PbI2 polycrystals[J].Crystal Research and Technology: Journal of Experimental and Industrial Crystallography,2006(3):239-242.
[15] 张玉龙;唐磊.人工晶体生长技术、性能与应用[M].北京:化学工业出版社,2005:216.
[16] 朱世富;赵北君.材料制备科学与技术[M].北京:高等教育出版社,2006:173.
[17] Shoji T.;Ohba K. .Characterization of PbI/sub 2/ radiation detectors using the response of /spl alpha/-rays[J].IEEE Transactions on Nuclear Science,1994(4):694-697.
[18] Manoel E R;Custodio M C C;Guimaraes F E G et al.Growth and characterization of HgI2,PbI2 and PbI2:HgI2layered semiconductors[J].Materials Research,1999,2(02):75.
[19] Oliveira I.B.;Costa F.E.;Armelin M.J.;Cardoso L.P.;Hamada M.M. .Purification and growth of PbI/sub 2/ crystals: dependence of the radiation response on the PbI/sub 2/ crystal purity[J].IEEE Transactions on Nuclear Science,2002(4):1968-1973.
[20] Hayashi T;Kinpara M;Wang JF;Mimura K;Isshiki M .Growth of ultra-high purity PbI2 single crystal: (1) Preparation of high purity PbI2[J].Crystal Research and Technology: Journal of Experimental and Industrial Crystallography,2008(1):9-13.
[21] 赵欣,金应荣,朱兴华.垂直布里奇曼法生长碘化铅单晶体[J].材料科学与工艺,2006(04):428-431.
[22] 赵欣,金应荣,朱兴华,贺毅,邱春丽.碘化铅单晶体生长工艺分析[J].硅酸盐通报,2006(04):168-171.
[23] He Y;Zhu SF;Zhao BJ;Jin YR;He ZY;Chen BJ .Improved growth of PbI2 single crystals[J].Journal of Crystal Growth,2007(2):448-451.
[24] 朱兴华,赵北君,朱世富,金应荣,向安平,魏昭荣.富铅配料合成PbI2多晶及其熔体分层研究[J].人工晶体学报,2007(03):494-497.
[25] 金应荣,李丽霞,贺毅,朱兴华.U型坩埚上升法生长碘化铅单晶体[J].西华大学学报(自然科学版),2007(01):31-32.
[26] 贺毅,朱世富,赵北君,金应荣,朱兴华,栾道成.碘化铅单晶体生长新方法探索[J].人工晶体学报,2007(02):289-292,333.
[27] Zhao X et al.Polycrystalsynthesis and single crystal growth of PbI2[J].Appl Mech Mater,2010,26-28:720.
[28] 朱兴华,赵北君,朱世富,金应荣,向安平,魏昭荣.富铅配料的PbI2晶体生长与性能表征[J].半导体学报,2007(06):898-901.
[29] Shoji T.;Ohba K. .Fabrication of radiation detector using PbI/sub 2/ crystal[J].IEEE Transactions on Nuclear Science,1995(4):659-662.
[30] Shoji T.;Hitomi K. .Fabrication of a nuclear radiation detector using the PbI/sub 2/ crystal and its response characteristics for gamma-rays[J].IEEE Transactions on Nuclear Science,1998(3):581-584.
[31] Eckstein J;Erler B;Eiche C et al.Growth of bulk lead iodide crystals from the vapour phase[J].Journal of Crystal Growth,1993,131:453.
[32] Eckstein J;Erler B;Benz K w .High purity lead iodide for crystal growth and its characterization[J].Materials Research Bulletin,1992,27:537.
[33] Shoji T;Sakamoto K;Ohba K et al.Characterization of the PbI2 crystal as a material for radiation detectors[J].IEEE Transactions on Nuclear Science,1997,23:25.
[34] 气压和温度对气相法生长PbI2晶体的影响[J].兰州大学学报(自然科学版),2005(05):74-76.
[35] Bhavsar DS.;Saraf KB. .Morphology of PbI2 crystals grown by gel method[J].Crystal Research and Technology: Journal of Experimental and Industrial Crystallography,2002(1):51-55.
[36] Soudmand M;Habibi S .Influence of doping on the surface feature and formation of PbI2 polytypes[J].Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films,2004(8):1071-1073.
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