前期研究发现,SiC颗粒在阴极有利于Ni结晶形核,为此研究了在电位-250～-1050 mV(vs SCE)下,Ni-SiC复合体系电沉积阻抗谱特征,利用扫描电镜(附能谱仪)观察了Ni-SiC体系复合沉积初期的表面形貌.结果表明:Ni-SiC体系Nyquist谱主要表现为一个压扁的容抗半圆,随着电位负移,Ni-SiC沉积的电化学阻抗值基本呈下降趋势.在电位-750～-1050 mV,Nyquist谱低频段还伴随一个感抗弧,Ni-SiC沉积的阻抗显著减小,反映Ni在铜基体上开始电结晶形核/生长;在低过电位(-250～-650 mV)下,Sic颗粒明显降低了Ni-Sic体系Ni沉积还原反应的电荷转移电阻;分析认为:Sic微粒在阴极表面上对镍的中间产物生成起到了活化作用.
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