采用热蒸发法在50℃、100℃、150℃这3种不同的基底温度下沉积CdS薄膜,且对150℃生长的CdS薄膜取样进行退火处理30 min,并对所有样品的微观结构和光学特性进行了分析.结果表明,不同基底温度下制备的CdS薄膜均具有(002)择优取向生长的特征,且随着基底温度的升高,(002)特征衍射峰强度增加,半高宽变小,相应薄膜结晶度增大,有利于晶粒的生长.最终发现,150℃生长且经过退火处理的薄膜具有较为明显的六方相CdS多晶薄膜结构和较优的光学性能,能满足高效CIGS薄膜电池中缓冲层材料的基本要求.
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