用X射线衍射和Raman光谱技术研究了KDP晶体165℃退火前后微观结构的变化.实验发现退火24h可以减小晶体生长过程中带来的晶格的畸变,提高了晶体的完整性,缩小晶体中键长和键角的变化范围,使晶体内应力得以部分释放.对于快速生长的晶体,退火的效果更加显著.
参考文献
[1] | Campbell J H;Atherton L J;De Yoreo J J et al.Large-aperture, High-damage-threshold Optics for Beamlet, ICF Quarterly Report 5(1)[R].Lawrence Livermore National Laboratory, Livemore, CA, UCRL-LR-105821-95-1,1995. |
[2] | okotanl A;Sasaki T;Yoshida K et al.[J].Applied Physics Letters,1986,48:1030. |
[3] | Zaitseva N.;Smolsky I.;Torres R.;Yan M.;Carman L. .The effect of impurities and supersaturation on the rapid growth of KDP crystals[J].Journal of Crystal Growth,1999(4):512-524. |
[4] | 傅有君,高樟寿,刘嘉民.生长条件对KDP晶体激光损伤阈值的影响[J].强激光与粒子束,1998(01):118. |
[5] | 王圣来,付有君,孙洵,李义平,曾红,高樟寿.实时控制过饱和度降温法生长KDP晶体[J].无机材料学报,2001(01):37-44. |
[6] | Swain J;Stokowski S;Milam D et al.[J].Applied Physics Letters,1982,40(04):350. |
[7] | Swain J;Stokowski S;Milam D et al.[J].Applied Physics Letters,1982,41(01):12. |
[8] | Fujioka K.;Kanabe T.;Fujita H.;Nakatsuka M.;Matsuo S. .OPTICAL PROPERTIES OF RAPIDLY GROWN KDP CRYSTAL IMPROVED BY THERMAL CONDITIONING[J].Journal of Crystal Growth,1997(3):265-271. |
[9] | 王圣来 .KDP晶体过饱和度实时控制生长和改善晶体的均匀性[D].山东大学,2000. |
[10] | 许顺生;冯端.X射线衍射貌相学[M].北京:科学出版社,1987:168. |
[11] | Vries S A;Goedtkindt P;Huisman W J et al.[J].Journal of Crystal Growth,1999,205:202. |
[12] | Enckevort W J P;Janssen-Van Rosmalen R;Klapper H et al.[J].Journal of Crystal Growth,1982,60:67. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%