采用激光脉冲沉积法(PLD)在石英玻璃上成功制备了一系列MgZnO薄膜.并通过选用高Mg含量的靶材,成功将薄膜的吸收边调节至极紫外区域(200～280nm),经计算MgZnO薄膜的带隙高达5.46eV.进一步研究这种高Mg含量的MgZnO薄膜的结构特性,对薄膜进行了热退火处理,并首次观察到依赖于退火温度变化的(220)取向衍射峰的变化.
参考文献
| [1] | 胡海华,王家玮.氧化锌的能带工程[J].材料导报,2009(19):87-92. |
| [2] | Ohtomo A.;Koida T.;Masubuchi K.;Koinuma H.;Sakurai Y. Yoshida Y.;Yasuda T.;Segawa Y.;Kawasaki M. .MgxZn1-xO as a II-VI widegap semiconductor alloy[J].Applied physics letters,1998(19):2466-2468. |
| [3] | A. K. Sharma;J. Narayan;J. F. Muth;C. W. Teng;C. Jin;A. Kvit;R. M. Kolbas;O. W. Holland .Optical and structural properties of epitaxial Mg_xZn_(1-x)O alloys[J].Applied physics letters,1999(21):3327-3329. |
| [4] | Choopun S;Vispute R D;Yang W et al.Realization of band gap above 5.0eV in metastable cubic-phase MgxZn1-x-O alloy films[J].Applied Physics Letters,2002,80(12):1529. |
| [5] | (O)zgür (U);Alivow Ya 1;Liu C et al.A comprehensive review of ZnO materials and devices[J].Journal of Applied Physics,2005,98:041301. |
| [6] | Waller D;Kumar V;Mi K et al.Solar-bland AlGaN pho-todiodes with very low cutoff wavelength[J].Applied Physics Letters,2000,76(04):403. |
| [7] | 兰伟,唐国梅,曹文磊,刘雪芹,王印月.Ni掺杂ZnO薄膜的结构与光学特性研究[J].物理学报,2009(12):8501-8505. |
| [8] | Rodriguez J A;Jirsak T;Perez M et al.Studies on the behavior of mixed-metal oxides:Adsorption of CO and ON on MgO(100),NixMg1-xO(100),and CrxMg1-xO(100)[J].Journal of Chemical Physics,2001,114(21):4186. |
| [9] | Zhao, YM;Zhang, JY;Jiang, DY;Shan, CX;Zhang, ZZ;Yao, B;Zhao, DX;Shen, DZ .MgNiO-based metal-semiconductor-metal ultraviolet photodetector[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2009(9):092007:1-092007:4. |
| [10] | Narayan J.;Sharma AK.;Kvit A.;Jin C.;Muth JF.;Holland OW. .Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates[J].Solid State Communications,2002(1):9-13. |
| [11] | Liu C Y;Xu Y;Wang L et al.Pulsed laser deposition of high Mg-content MgZnO films:Effects of substrate tempersture and oxygen pressure[J].Journal of Applied Physics,2009,106(07):073518. |
| [12] | Yang W.;Hullavarad SS.;Nagaraj B.;Takeuchi I.;Sharma RP.;Venkatesan T.;Vispute RD.;Shen H. .Compositionally-tuned epitaxial cubic MgxZn1-xO on Si(100) for deep ultraviolet photodetectors[J].Applied Physics Letters,2003(20):3424-3426. |
| [13] | John L. Morrison;Jesse Huso;Heather Hoeck;Erin Casey;James Mitchell;Leah Bergman;M. Grant Norton .Optical properties of ZnO and MgZnO nanocrystals below and at the phase separation range[J].Journal of Applied Physics,2008(12):123519-1-123519-6-0. |
| [14] | Bhattacharya P;Das R R;Katiyar R S .Fabrication of stable wide-band-gap ZnO/MgO multilayer thin films[J].Applied Physics Letters,2003,83(10):2010. |
| [15] | Polyakov AY;Smirnov NB;Govorkov AV;Kozhukhova EA;Belogorokhov AI;Kim HS;Norton DP;Pearton SJ .Annealing effects on electrical properties of MgZnO films grown by pulsed laser deposition[J].Journal of Applied Physics,2008(8):83704-1-83704-5-0. |
| [16] | Misra P.;Mallik K.;Rajagopalan S.;Kukreja LM.;Rustagi KC.;Bhattacharya P. .Variation of bandgap with oxygen ambient pressure in MgxZn1-xO thin films grown by pulsed laser deposition[J].Solid State Communications,2001(11):673-677. |
| [17] | Vashaei Z;Minegishi T;Suzuki H et al.A high-resolution electron microscopy study of MgxZn1-x O films grown on MgO/c-sapphire[J].Physical Status Solidi,2006,4(03):1042. |
| [18] | H. D. Sun;T. Makino;Y. Segawa;M. Kawasaki;A. Ohtomo;K. Tamura;H. Koinuma .Enhancement of exciton binding energies in ZnO/ZnMgO multiquantum wells[J].Journal of Applied Physics,2002(4):1993-1997. |
| [19] | Makino T;Tamura;Chia C H et al.Eeffect of MgZnO-layer capping on optical properties of ZnO epitaxial layer[J].Applied Physics Letters,2002,81(12):2172. |
| [20] | Ju Z G;Shan C X;Jiang D Y et al.Mg,Zn1-xO-based pho-todetectors covering the whole solar-blind spectrum range[J].Applied Physics Letters,2008,93(17):173505. |
| [21] | Qin JM;Yao B;Jia XP;Shan CX;Zhang JY;Ma HA;Shen DZ .Characterizations of single-phased cubic Mg0.5Zn0.5O prepared at high pressure and high temperature[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2008(15):155408-1-155408-4-0. |
| [22] | L. K. Wang;Z. G. Ju;J. Y. Zhang;J. Zheng;D. Z. Shen;B. Yao;D. X. Zhao;Z. Z. Zhang;B. H. Li;C. X. Shan .Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices[J].Applied physics letters,2009(13):131113-1-131113-3. |
| [23] | Kim H S;Lugo F;Pearton S J et al.Phosphorus doped ZnO light emitting diodes frabricated via pulsed laser deposi-tion[J].Applied Physics Letters,2008,92(11):112108. |
| [24] | Swanepoel R .Determination of the thickness and optical constants of amorphous silicon[J].Journal of Physics E:Scientific Instruments,1983,16:1214. |
| [25] | Xinman Chen;Kaibin Ruan;Guangheng Wu;Dinghua Bao .Tuning electrical properties of transparent p-NiO/n-MgZnO heterojunctions with band gap engineering of MgZnO[J].Applied physics letters,2008(11):112112-1-112112-3-0. |
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