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X-ray diffraction fitting of the profiles for P-implanted monocrystalline Si was performed by means of Pearson Ⅶ and Pseudo-Voigt functions.It was found that the exactitude of the latter is better than the former.However, the former can be used to calculate the parameters easily.The correlation between 2ω/β and Pearson Ⅶ parameters m and a was presented and applied to phase analysis of SiO_2-SnO_2 mixture.
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