采用MetalVaporVacuumArc(MEVVA)离子源的离子束合成法,往Si衬底注入剂量为3.0×1017～1.6×1018cm-2的C+制成SiC埋层,C+离子束的引出能量为50keV.光电子能谱和红外吸收谱表明SiC埋层的结构特征明显地依赖于剂量,采用MEVVA离子源可以在平均衬底温度低于400℃时得到含有立方结构的SiC埋层.
Buried SiC layers of different implantation doses were formed by using a metal vapor vacuum arc (MEVVA) ion source, with C+ ions implanted into Si substrates. In the present study the beam energy was 50keV and the ion dose was varied from 3.0×1017cm-2 to
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