综述了CuIn1-xGaxSe2 (CIGS)的晶体结构、光学性质和电学性质,介绍了其禁带宽度、导电类型、吸收系数、晶界面复合速率和少子寿命等重要参数.重点介绍了利用磁控溅射系统制备CIGS薄膜的两种制备工艺:磁控溅射金属预制层硒化法和单步溅射法；综述了非真空制备工艺中常用的电化学沉积法.分析了CIGS现存问题:制备工艺复杂、成本高,稀有金属In、Ga的短缺；并提出了相应的解决措施及发展趋势.
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