采用化学气相沉积法以乙醇为碳源在铜箔生长的单层高质量的石墨烯并将其转移到SiO2/Si基底上。然后在通过自组装的方法在石墨烯表面覆盖一层单层的PS微球阵列。采用反应离子刻蚀的方法在一定的刻蚀条件下对其进行刻蚀,随着刻蚀的时间增加,PS微球的会被逐渐刻蚀掉,石墨烯也会在这个过程中随着被刻蚀。将残留的PS微球杂质去掉后,会在 SiO2/Si基底上呈现出排列规整的石墨烯纳米盘阵列。通过场发射扫描电子显微镜( SEM)、拉曼光谱对石墨烯纳米盘及其形成过程进行表征和分析,为后续制备高质量石墨烯纳米带、石墨烯纳米点、石墨烯纳米盘提供参考。
High quality single layer graphene is formed on copper foil with ethnol as carbon source by CVD method then transferred on SiO2/Si substrate. Then the graphene surface is covered with a layer of sibgle layer PS microsphere array by self-assembly method. And it is etched by oxygen plasma, with the etching time increasing, PS microsphere will be gradually etched, and graphene will also be etched in the process. Regular graphene nanodisk arrays will be formed on SiO2/Si substrate after the the removal of impurities of PS microsphere. Field emission scanning electron microscopy ( SEM) , Raman spectroscopy are used to characterization test the graphene nanodisks and its forming process. And it has important reference meaning for preparation of high quality graphene nanoribbons, nanodot, nanodisk.
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