ZnO是新型的宽禁带半导体材料,其激子束缚能较大,透明度高,在液晶显示器、隔热玻璃、薄膜晶体管、发光二极管等产品中均有应用.目前,虽然生长ZnO体单晶的方法已有多种,如水热法、助熔剂法、气相法、熔体法等,但大尺寸体单晶的制备仍然十分困难,而且质量也有待提高.本文综述了已有生长技术的优缺点,并提出了未来的研究方向.
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