AlN是一种在热、电、光和机械等方面具有良好综合性能的材料,作为电子薄膜材料在微电子、电子元件、高频宽带通信以及功率半导体器件等领域有广泛应用.简介了AlN薄膜的制备方法,评述了国内外各科研团体的最新研究成果和进展,阐述了AlN薄膜的应用,并综述了近年来AlN薄膜作为缓冲层、SOI结构的绝缘埋层和吉赫兹级声表面渡器件压电薄膜的研究现状.
参考文献
[1] | 冯玉春,施炜.新一代半导体材料新贵GAN[J].深圳特区科技,2005(09):82-86. |
[2] | 潘俊德,田林海,莘海维,贺琦.电子浴辅助阴极电弧源法合成AlN薄膜影响因素研究[J].热加工工艺,2000(06):34-35,64. |
[3] | 门传玲,徐政,郑志宏,多新中,张苗,林成鲁.离子束增强沉积AlN薄膜的研究[J].压电与声光,2001(05):366-369. |
[4] | 秦福文,顾彪,徐茵,杨大智.GaN缓冲层上低温生长AlN单晶薄膜[J].半导体光电,2003(01):32-36. |
[5] | 乔保卫,刘正堂,李阳平.工艺参数对磁控反应溅射AlN薄膜沉积速率的影响[J].西北工业大学学报,2004(02):260-263. |
[6] | Simpkins BS;Zhang H;Yu ET .Defects in nitride semiconductors: From nanoscale imaging to macroscopic device behavior[J].Materials science in semiconductor processing,2006(1/3):308-314. |
[7] | Zhang J C;Zhao D G et al.The influence of AlN buffer layer thickness on the properties of GaN epilayer[J].Journal of Crystal Growth,2004,268:124. |
[8] | Wu CL;Shen CH;Chen HY;Tsai SJ;Lin HW;Lee HM;Gwo S;Chuang TF;Chang HS;Hsu TM .The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy[J].Journal of Crystal Growth,2006(2):247-253. |
[9] | Fan Z Y;Rong G;Browning J et al.High temperature growth of AlN by plasm-enhanced molecular beam epitaxy[J].Material Science and Engineering,1999,B67:80. |
[10] | Song Z R;Yu Y H et al.Simulation and charac-terization on properties of AlN films for SOI application[J].Thin Solid Films,2004,459:41. |
[11] | 门传玲,徐政,安正华,吴雁军,林成鲁.AlN薄膜室温直接键合技术[J].半导体学报,2003(02):216-220. |
[12] | 许小红,武海顺,张聪杰,金志浩.磁控溅射制备择优取向氮化铝薄膜[J].应用化学,2000(04):411-413. |
[13] | 许小红,武海顺,张聪杰,金志浩.溅射沉积AlN薄膜结构与基片种类的关系[J].压电与声光,2000(04):256-258. |
[14] | 王忠良,刘桥.衬底温度对反应磁控溅射制备AlN压电薄膜的影响[J].电子元件与材料,2005(07):47-49. |
[15] | Benetti M et al.Growth and characterization of piezoelectric AlN thin films for diamond-based sudace acoustic wave devices[J].Thin Solid Films,2006,497:304. |
[16] | Huang Jipo;Wang Lianwei;Shen Qinwo et al.Preparationof AlN thin films by nitridation of Al-coated Si substrate[J].Thin Solid Films,1999,340:137. |
[17] | 刘吉延,斯永敏.AlN压电薄膜研究进展[J].材料导报,2003(z1):210-213. |
[18] | 于毅,任天令,刘理天.硅基AlN薄膜制备技术与测试分析[J].半导体学报,2005(01):42-45. |
[19] | Okano H et al.Resist and sidewall film removal after aluminum reactive ion etching(RIE)employing fluorine+H2Odown stream ashing[J].Japanese Journal of Applied Physics,1993,32(9b):4052. |
[20] | Hsieh P Y .DC reactive sputtering of low stress AlN piezoelectric thin films for MEMS application[D].麻省理工学院,1996. |
[21] | 廖克俊,王万录.宽带隙半导体AlN薄膜的制备及应用[J].半导体技术,2001(01):21-23. |
[22] | 黄继颇;王连卫 等.性能优异的多功能宽禁带半导体AlN薄膜[J].功能材料,1999,30(02):141. |
[23] | 颜国君,陈光德,竹有章,邱复生,范朝阳.氮化铝薄膜中的二次谐波产生[J].光学学报,2004(09):1245-1248. |
[24] | 缪向水;胡用时;林更琪 等.AlN和AlSiN薄膜的制备工艺及其光学特性[J].华中理工大学学报,1995,23(z1):187. |
[25] | 邵乐喜,刘小平,谢二庆,贺德衍,陈光华.热退火对射频反应溅射氮化铝薄膜场电子发射的影响[J].无机材料学报,2001(05):1015-1018. |
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