利用射频磁控溅射技术,在生长了Ta缓冲层的石英玻璃衬底上采用不同溅射功率下制备了一系列的硅薄膜样品,用拉曼光谱和X射线衍射表征了薄膜的结晶性随溅射功率的变化情况.实验结果表明:随着溅射功率的增加,薄膜逐渐由非晶向微晶过渡,晶粒沿Si(311)面呈柱状生长,功率升高到80 W时薄膜的晶化率达到75.4%,薄膜为典型的微晶结构.继续增加功率,薄膜的结晶性变差,晶化率下降,在60～120 W之间存在一个优化理想的射频溅射功率,在此功率下生长的薄膜样品的结晶性最高.本文还尝试解释了Ta缓冲层在Si晶化过程中的作用.
参考文献
| [1] | Alexandrova S;Danesh P;Maslyanitsyn I A .SHG and AFM Study of PECVD a-Si:H Films[J].Vacuum,2003,69(1-3):391-394. |
| [2] | Guha S.Thin film Silicon Solar Cells Grown near the Edge of Amorphous to Microcrystalline Transition[J].Journal of Solar Energy Engineering(06):887-892. |
| [3] | 余云鹏,林璇英,林舜辉,黄锐.光照和偏压对微晶硅薄膜室温电导的影响[J].物理学报,2006(04):2038-2043. |
| [4] | Keppner H;Torres P;Flückiger R et al.Pussivation Properties of Amorphous and Microcrystalline Silicon Layers Deposited by VHF-GD for Crystalline Silicon Solar Cells[J].Solar Energy Materials and Solar Cells,1994,34(1-4):201-209. |
| [5] | 陈一匡,林揆训,罗志,梁锐生,周甫方.铝诱导非晶硅薄膜的场致低温快速晶化及其结构表征[J].物理学报,2004(02):582-586. |
| [6] | Pereira L;Martins RMS;Schell N;Fortunato E;Martins R .Nickel-assisted metal-induced crystallization of silicon: Effect of native silicon oxide layer[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(0):275-279. |
| [7] | Laurila T;Zeng K;Kivilahti J K et al.Tantalum Carbide and Nitride Diffusion Barriers for Cu Metallisation[J].Microelectronic Engineering,2002,60(1-2):71-80. |
| [8] | M. Rojas-Lopez;V.L. Gayou;R.E. Perez-Blanco;A. Torres-Jacome;H. Navarro-Contreras;M.A. Vidal .Raman studies of aluminum induced microcrystallization of n+ Si:H films produced by PECVD[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1):32-37. |
| [9] | 马智训,廖显伯,孔光临,褚君浩.镶嵌在氧化硅薄膜中纳米硅的Raman散射研究[J].中国科学(A辑),2000(02):169-175. |
| [10] | 李瑞,卢景霄,陈永生,杨仕娥,郜小勇,靳锐敏,王海燕,张宇翔,张丽伟.PECVD法低温制备微晶硅薄膜的晶化控制[J].科学技术与工程,2005(13):876-878,883. |
| [11] | 郭晓旭,朱美芳,刘金龙,韩一琴,许怀哲,董宝中,生文君,韩和相.高氢稀释制备微晶硅薄膜微结构的研究[J].物理学报,1998(09):1542-1547. |
| [12] | 张国炳,郝一龙,田大宇,刘诗美,王铁松,武国英.多晶硅薄膜应力特性研究[J].半导体学报,1999(06):463. |
| [13] | 李瑞,卢景霄,陈永生,杨仕娥,靳锐敏,王海燕,张宇翔,郜小勇.Raman散射和AFM对多晶硅薄结晶状况的研究[J].光散射学报,2005(02):142-147. |
| [14] | 赵淑云,吴春亚,李娟,刘建平,张晓丹,张丽珠,孟志国,熊绍珍.化学源金属诱导多晶硅研究[J].物理学报,2006(02):825-829. |
| [15] | 张丽伟,赵新蕖,卢景霄,郜小勇,陈永生,靳瑞敏.对柱状多晶硅薄膜的制备研究[J].人工晶体学报,2006(05):1159-1162. |
| [16] | 林璇英,黄创君,林揆训,余运鹏,余楚迎,黄锐.用SiCl4-H2低温沉积多晶硅薄膜微结构的Raman分析[J].物理学报,2004(05):1558-1561. |
| [17] | Reber S.;Kieliba T.;Zimmermann W. .Zone melting recrystallization of silicon films for crystalline silicon thin-film solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):409-416. |
| [18] | 于广华,崔新发,金建灵,王安荣.磁控溅射制备磁性多层膜中SiO2/Ta界面的研究[J].真空电子技术,2002(02):1-4. |
| [19] | Huang T C;Nozieres J P;Speriousu V S et al.Effect of Annealing on the Interfaces of Giant-magnetoresistance Spin-valve Structrues[J].Applied Physics Letters,1993,62:1478-1480. |
| [20] | 龙世兵,马纪东,于广华,赵洪辰,朱逢吾,张国海,夏洋.SiO2/Ta界面反应及其对Cu扩散的影响[J].北京科技大学学报,2003(01):33-35. |
| [21] | 庞恩文,林晶,吉小松,汪荣昌,戎瑞芬,宗祥福.钽薄膜淀积速率与阻挡效果的研究[J].固体电子学研究与进展,2002(02):185-188. |
| [22] | 胡忠武,李中奎,张小明.钽及钽合金的工业应用和进展[J].稀有金属快报,2004(07):8-10. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%