如何获得理想的氮化铝陶瓷是电子陶瓷材料研究领域的重要课题.本研究采用纳米复合添加剂Y_2O_3-La_2O_3,分别在1600℃、1650℃、1700℃、1750℃和1800℃下,无压烧结氮化铝陶瓷.测定并分析了AlN陶瓷的性能和微观结构.实验结果表明:烧结温度达到1750℃,就可获得致密烧结,此时AlN晶粒细小均匀,第二相Al_2Y_4O_9、LaAlO_3和Y_2O_3分布在AlN晶界,AlN晶粒内的氧含量很低,AIN陶瓷样品的热扩散率较高.
The exploration for obtaining ideal AlN ceramics is a key topic in the electronical ceramic field.Ceramics doped with compound nano-additives Y_2O_3-La_2O_3 were sintered without pressure at 1600℃,1650℃,1700℃,1750℃,1800℃,respectively.The properties and microstructures of the sintered AlN ceramics were measured and studied.The results show that the dense AlN ceramics can be obtained at 1750℃,and the grains of AIN ceramics are uniform and small.The secondary phases Al_2Y_4O_9、LaAlO_3 and Y_2O_3 distribute at grain boundaries of AlN ceramics.Oxygen content in AlN grains is very lower,and the thermal diffusibility is higher.
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