本文研究了氩等离子体处理对ZnO薄膜阻变效应的影响,发现等离子体处理可以使薄膜表面平整,并且增加薄膜中的缺陷浓度.以等离子体处理后的ZnO薄膜作为介质层,在Pt/ZnO/Pt三明治结构中观察到无电形成过程的阻变效应.本文研究表明,氩等离子体处理是消除氧化物阻变效应电形成过程的有效手段.
参考文献
[1] | RAINER WASER;MASAKAZU AONO .Nanoionics-based resistive switching memories[J].Nature materials,2007(11):833-840. |
[2] | 郭鹏,徐伟.有机电双稳材料与器件的研究进展[J].材料科学与工程学报,2005(06):910-914. |
[3] | T.W.Hickmott .Low-frequency negative resistance in thin anodic oxide films[J].Journal of Applied Physics,1962,33(09):2669-2682. |
[4] | Ji, Z.;Mao, Q.;Ke, W. .Effects of oxygen partial pressure on resistive switching characteristics of ZnO thin films by DC reactive magnetron sputtering[J].Solid State Communications,2010(39/40):1919-1922. |
[5] | Zhuge, F.;Peng, S.;He, C.;Zhu, X.;Chen, X.;Liu, Y.;Li, R.-W. .Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments[J].Nanotechnology,2011(27):275204-1-275204-7. |
[6] | Q.Liu;S.B.Long;W.Wang;Q.Y.Zuo,S.Zhang,J.N.Chen,M.Liu .Improvement of resistive switching properties in ZrO2-based ReRAM with implanted Ti ions[J].IEEE Electron Device Lett,2009,30(12):1335-S1337. |
[7] | Qi Liu;Jun Sun;Hangbing Lv;Shibing Long;Kuibo Yin;Neng Wan;Yingtao Li;Litao Sun;Ming Liu .Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM[J].Advanced Materials,2012(14):1844-1849. |
[8] | C.Nauenheim;C.Kuegeler;A.Ruediger;R.Waser .Investigation of the electro forming process in resistivity switching TiO2 nanocrosspoint junctions[J].Applied Physics Letters,2010,96(12):122902. |
[9] | Mao, Q.;Ji, Z.;Xi, J. .Realization of forming-free ZnO-based resistive switching memory by controlling film thickness[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2010(39):395104-1-395104-5. |
[10] | S. U. Sharath;T. Bertaud;J. Kurian;E. Hildebrandt;C. Walczyk;P. Calka;P. Zaumseil;M. Sowinska;D. Walczyk;A. Gloskovskii;T. Schroeder;L. Alff .Towards forming-free resistive switching in oxygen engineered HfO_(2-x)[J].Applied physics letters,2014(6):063502-1-063502-5. |
[11] | Ji-Myon Lee;Kyoung-Kook Kim;Seong-Ju Park;Won-Kook Choi .Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO[J].Applied physics letters,2001(24):3842-3844. |
[12] | Nuo Xu;Lifeng Liu;Xiao Sun;Xiaoyan Liu;Dedong Han;Yi Wang;Ruqi Han;Jinfeng Kang;Bin Yu .Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories[J].Applied physics letters,2008(23):232112-1-232112-3-0. |
[13] | Kim, K.M.;Jeong, D.S.;Hwang, C.S. .Nanofilamentary resistive switching in binary oxide system; A review on the present status and outlook[J].Nanotechnology,2011(25):254002-1-254002-17. |
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