A series of CoFe(4 nm)/ Cu(X nm)Al(Y nm)/CoFe(6 nm) samples have been prepared at room temperature. Anexponential decay of the GMR( Giant Magnetoresistance) with Y was observed for fixed X＝2nm. The characteristicdecay parameter of Al is obtained to be about 0.26nm, which is rather close to 1 monolayer for Al. A coexistantstate of GMR and AMR (anisotropic magnetoresistance) was observed when Y＝2 nm. As the Cu spacer is replacedby Al layer, only AMR effect dominates. The experimental data further underline the important role played by thenonmagnetic spacers.
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