运用湿化学与表面化学方法制备了ZnS/HgS/ZnS/CdS量子点量子阱(QDQW)结构,以吸收光谱、光致发光及激发谱表征该结构,并研究了外层CdS对材料发光特性的影响,首次观测到CdS对中间HgS阱层发光的增强作用,并归因于隧道效应(Tunneling Effect)的存在.
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