在恒电流光电曲线上选取等时间间隔数列ｔ（ｉ）对应的过电位为Ｅ（ｉ）．任取可能的稳态过电位Ｅ；令Ｙ（ｉ）＝Ｅ—Ｅ（ｉ）再今Ｗ（ｉ）＝Ｉｎ［Ｙ（ｉ＋１）·Ｙ（ｉ—１）－Ｙ２（ｉ）］．得数列Ｗ（ｉ）。可以证明，Ｗ（ｉ）与ｔ（ｉ）呈线性关系．根据其斜率Ｋ和截距Ｂ可求得稳态过电位Ｅ∞，再利用Ｉｎ［Ｅ∞－Ｅ（ｉ）］对ｔ（ｉ）的线性关系，求得斜率Ｋ’和截距Ｂ’，井据此求得极化阻力Ｒｐ，界面电容Ｃｄ，及溶液电阻Ｒ１。
A series of dots on galvanostatic charge curve with equal time interval were chosen to form a time array t(i) and a corresponding overpotential array E(i). By assigning a possible static overpotential E and letting y(i) = E- E(i), another array Y(i) could be obtained. By letting W(i) = ln[Y(i +1)·y(i-1)-Y2(i)], an additonal array W(i) could generated. It could be proved that W(i) was linear with t(i). Moreover, with its slope Kand intercept B, the real static overpotential E∞ could be calculated. Furthemore, owing to the linear relationship between In[E∞-E(i)] and t(i), the parameters R1,Rp and Cd could be calculated through its slope K' and B'.
参考文献
| [1] | 宋诗哲．中国腐蚀与防护学报,1981,1(3):76-87 |
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