为了探求分离结晶技术中晶体稳定生长的控制条件,本文根据里亚普诺夫稳定性理论利用数值方法对CdZnTe晶体在地面条件下不同结晶工况进行了结晶界面形状的计算和相应的稳定性分析.结果表明,当结晶时的生长角和接触角之和小于180°时,分离结晶过程是不稳定的;当生长角和接触角之和大于180°且冷热端存在很小的负压差时,分离结晶过程是稳定的.
参考文献
[1] | W. R. Wilcox;L. L. Regel .Detached Solidification[J].Microgravity science and technology,1995(1):56-61. |
[2] | Jianbin Wang;Liya L. Regel;William R. Wilcox .Detached solidification of InSb on earth[J].Journal of Crystal Growth,2004(3/4):590-599. |
[3] | Nicolas Chevalier;Pierre Dusserre;Jean-Paul Garandet;Thierry Duffar .Dewetting application to CdTe single crystal growth on earth[J].Journal of Crystal Growth,2004(4):590-594. |
[4] | D J Larson .Orbital Processing of High-Quality Cadmium zinc Telluride (CdZnTe) Compound Semiconductors[J].Microgravity News,1994,1(06):10-21. |
[5] | T.duffar;P.Dusserre;N.Giacometti .Dewetting and structural Quality of CdTe:Zn:V grown in space[J].Acta Astronautica,2001(2/3):157-161. |
[6] | Palosz W;Volz M;Cobb S;Motakef S;Szofran FR .Detached growth of germanium by directional solidification[J].Journal of Crystal Growth,2005(1/4):124-132. |
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