以聚乙烯吡咯烷酮(PVP)和Ga(NO3)3为前驱体,利用静电纺丝和热处理技术制备了直径在100~300 nm左右的单斜结构的Ga2O3纳米纤维,并通过氨气氮化技术制备了GaN纳米纤维.XRD结果表明GaN样品为六方纤锌矿结构,且最佳氮化温度为850℃,氮化时间为2h.Raman光谱发生了红移,并再次确定了GaN样品的结构,TGA结果表明GaN纤维在700℃以下在空气和氮气气氛下具有较好的稳定性,SEM和TEM表明纤维直径大约在100~200 nm之间,光催化测试表明GaN纤维对罗丹明6G有很好的降解效果.
参考文献
[1] | Maruska H P;Tietjen J J .The preparation and properties of vapor-deposited single-crystalline GaN[J].Applied Physics Letters,1969,15:327-329. |
[2] | Cheul-Ro Lee;Kyeong-Won Seol;Jeong-Mo Yeon .The effect of p-GaN:Mg layers on the turn-on voltage of p-n junction LED[J].Journal of Crystal Growth,2001(3):459-464. |
[3] | Kuroda N.;Kimura A.;Usui A.;Mochizuki Y.;Sasaoka C. .Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities[J].Journal of Crystal Growth,1998(0):551-555. |
[4] | 殷立雄,王芬,杨茂举,黄艳.Ga2O3氮化法合成GaN粉体的研究[J].硅酸盐通报,2006(04):41-44. |
[5] | 袁明文;潘静 .氮化镓微波电子学的进展[J].半导体情报,1999,36(04):1-9. |
[6] | 李彦平;关兴国 .Ⅲ-Ⅴ族氮化物半导体的进展[J].半导体情报,1996,33(05):1-6. |
[7] | Han W Q;Fan S S;Li Q Q et al.Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction[J].Science,1997,277:1287-1289. |
[8] | Johnson J C;Choi H J;Knutsen K P et al.Single gallium nitride nanowire lasers[J].Nature Materials,2002,1:106-110. |
[9] | Deli Wang;Fang Qian;Chen Yang;Zhaohui Zhong;Charles M. Lieber .Rational Growth of Branched and Hyperbranched Nanowire Structures[J].Nano letters,2004(5):871-874. |
[10] | Zhong ZH;Wang DL;Cui Y;Bockrath MW;Lieber CM .Nanowire crossbar arrays as address decoders for integrated nanosystems[J].Science,2003(5649):1377-1379. |
[11] | Yu Huang;Xiangfeng Duan;Yi Cui;Charles M. Lieber .Gallium Nitride Nanowire Nanodevices[J].Nano letters,2002(2):101-104. |
[12] | J.Y.Li;Z.Y.Qiao;X.L.Chen;Y.G.Cao;Y.C.Lan;C.Y.Wang .Morphologies of GaN one-dimensional materials[J].Applied physics, A. Materials science & processing,2000(5):587-588. |
[13] | Nam CY;Tham D;Fischer JE .Effect of the polar surface on GaN nanostructure morphology and growth orientation[J].Applied physics letters,2004(23):5676-5678. |
[14] | Kida T;Minami Y;Guan G;Nagano M;Akiyama M;Yoshida A .Photocatalytic activity of gallium nitride for producing hydrogen from water under light irradiation[J].Journal of Materials Science,2006(11):3527-3534. |
[15] | 秦菲,王进贤,董相廷,刘莹,刘桂霞.静电纺丝技术制备LaAlO3 纳米纤维与表征[J].硅酸盐通报,2010(05):1007-1011. |
[16] | 李家亮,柳巍,黄蕾.静电纺丝法制备La0.96Mn0.96O3纤维[J].硅酸盐通报,2006(06):179-181. |
[17] | 赵永生;高晓亮 .氮化镓(GaN)纳米材料的制备[J].长江大学学报,2006,3(02):500-502. |
[18] | Ueno M;Yoshida M;Onodera A et al.Stability of the wurtzite-type structure under high pressure:GaN and InN[J].Physical Review B,1994,49:14-21. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%