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用羟基硅烷的本体聚合方法合成了聚钛硅氧烷,并用FTIR和TGA对聚钛硅氧烷中Si-O-Ti的生成规律以及Si-O-Ti键和热性能的关系进行了研究.结果表明随Si-O-Ti键含量的增加,在400℃时聚钛硅氧烷的残炭率增加.

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