离子注入掺Mn的GaN基稀磁半导体,由于具有高于室温的居里温度及一系列独特性质而受到广泛重视.综述了GaN基稀磁半导体离子注入的近期研究成果,讨论了能量、剂量、温度、束流、退火条件等因素对GaMnN结构和性能的影响,并对GaMnN中铁磁性的起源,就理论和实验两方面的结果作了讨论.
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