铝诱导晶化(AIC)技术制备多晶硅(Poly-Si)薄膜因处理温度低、退火时间短,且所制备的薄膜晶粒尺寸大而受到广泛关注.阐述了AIC法制备Poly-Si薄膜的交换机制,着重讨论了AIC过程中工艺条件对制备Poly-Si薄膜质量的影响,简单介绍了AIC制备的Poly-Si薄膜在太阳电池器件方面的研究现状,并指出提高AIC法制备的Poly-Si薄膜籽晶层及外延层质量以改善薄膜电池性能是今后的重点研究方向.
参考文献
[1] | L. Pereira;H. Aguas;R.M.S. Martins;P. Vilarinho;E. Fortunato;R. Martins .Polycrystalline silicon obtained by metal induced crystallization using different metals[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(3):334-339. |
[2] | W. Knaepen;C. Detavernier;R.L. Van Meirhaeghe;J. Jordan Sweet;C. Lavoie .In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(15):4946-4952. |
[3] | W. Fuhs;S. Gall;B. Rau;M. Schmidt;J. Schneider .A novel route to a polycrystalline silicon thin-film solar cell[J].Solar Energy,2004(6):961-968. |
[4] | Spinella C.;Priolo F.;Lombardo S. .Crystal grain nucleation in amorphous silicon [Review][J].Journal of Applied Physics,1998(10):5383-5414. |
[5] | Tu K N .Selective growth of metal rich silicon of near-noble metals[J].Applied Physics Letters,1975,27(04):221. |
[6] | Dimova-Malinovska D .Metal induced crystallization an advanced method for polycrystalline Si films preparation[J].Funct Prop Nanostr Mater,2006,223(04):301. |
[7] | Schneider J;Klein J;Muske M;Gall S;Fuhs W .Depletion regions in the aluminum-induced layer exchange process crystallizing amorphous Si[J].Applied physics letters,2005(3):1905-1-1905-3-0. |
[8] | Schneider J;Schneider A;Sarikov A;Klein J;Muske M;Gall S;Fuhs W .Aluminum-induced crystallization: Nucleation and growth process[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2006(9/20):972-975. |
[9] | Schneider J;Heimburger R;Klein J et al.Aluminum-induced crystallization of amorphous silicon:Influence of temperature profiles[J].Thin Solid Films,2005,487(1-2):107. |
[10] | Nast O.;Koschier LM.;Sproul AB.;Wenham SR.;Puzzer T. .Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature[J].Applied physics letters,1998(22):3214-3216. |
[11] | Haque M S;Naseem H A;Brown W D .Interaction of aluminum with hydrogenated amorphous silicon at low temperatures[J].Journal of Applied Physics,1994,75(08):3928. |
[12] | Haque MS.;Brown WD.;Naseem HA. .ALUMINUM-INDUCED CRYSTALLIZATION AND COUNTER-DOPING OF PHOSPHOROUS-DOPED HYDROGENATED AMORPHOUS SILICON AT LOW TEMPERATURES[J].Journal of Applied Physics,1996(10):7529-7536. |
[13] | Prathap, P.;Tuzun, O.;Madi, D.;Slaoui, A. .Thin film silicon solar cells by AIC on foreign substrates[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2011(S1):S44-S52. |
[14] | 于振瑞,天津运输工程学院基础部,Yasuhiro Matsumoto.掺杂浓度对a-Si:H薄膜低温铝诱导晶化的影响[C].中国第六届光伏会议论文集,2000:98-101. |
[15] | 夏冬林,杨晟,赵修建.铝诱导晶化P型非晶硅薄膜实验研究[J].纳米科技,2005(05):60-63. |
[16] | 陈海力,沈鸿烈,张磊,杨超,刘斌.铝膜沉积温度对铝诱导结晶化多晶硅薄膜性能的影响[J].电子器件,2011(04):370-373. |
[17] | Klein J;Schneider J;Muske M et al.Aluminum-induced crystallization of amorphous silicon:Influence of the aluminum layer on the process[J].Thin Solid Films,2004,451-452(03):481. |
[18] | 陈海力,沈鸿烈,唐正霞,杨超,江丰.铝膜沉积工艺对AIC法制备多晶硅薄膜的影响[J].材料导报,2011(14):43-46. |
[19] | C. Jaeger;M. Bator;S. Matich;M. Stutzmann .Two-step crystallization during the reverse aluminum-induced layer exchange process[J].Journal of Applied Physics,2010(11):113513-1-113513-8. |
[20] | 唐正霞,沈鸿烈,鲁林峰,黄海宾,蔡红,沈剑沧.氧化铝膜对铝诱导制备多晶硅薄膜的影响[J].真空科学与技术学报,2010(01):38-42. |
[21] | Stoger-Pollach M;Walter T;Muske M et al.Phase transformations of an alumina membrane and its influence on silicon nucleation during the aluminum induced layer exchange[J].Thin Solid Films,2007,515(7-8):3740. |
[22] | Jeong H;Oh K H;LeeJ H.Characterization of polycrystalline silicon films produced by aluminum-induced layer exchange for the various thicknesses of an aluminum oxide layer[A].Gwangju,2010 |
[23] | 王成龙 .太阳能电池多晶硅薄膜铝诱导晶化机制及工艺控制研究[D].兰州:兰州交通大学,2009. |
[24] | Nast O;Wenham S R .Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by alurninum-induced crystallization[J].Journal of Applied Physics,2000,88(01):124. |
[25] | Oliver Nast;Andreas J. Hartmann .Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon[J].Journal of Applied Physics,2000(2):716-724. |
[26] | 李红菊,张丽伟,杨根,赵剑涛,张宇翔.不同衬底制备硅薄膜的微结构研究[J].人工晶体学报,2006(06):1318-1321. |
[27] | Growth of polycrystalline silicon on glass for thin-film solar cells[J].Journal of Crystal Growth,2010(8):p.1277. |
[28] | Jung M;Okada A;Saito T et al.In situ observation of polycrystalline silicon thin films grown using aluminumdoped zinc oxide on glass substrate by the aluminum-induced crystallization[J].Japanese Journal of Applied Physics,2011,50(04):04DP02. |
[29] | 唐正霞,沈鸿烈,江丰,方茹,鲁林峰,黄海宾,蔡红.变温退火制备铝诱导大晶粒多晶硅薄膜的机理研究[J].物理学报,2010(12):8770-8775. |
[30] | Lee JB.;Choi DK.;Yang YH. .Influences of directional crystallization using field aided lateral crystallization on the electrical characteristics of poly-Si thin film transistors[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(1/2):240-244. |
[31] | J.F. Li;X.B. Zeng;X.W. Sun;G.J. Qi .Field aided lateral crystallization of amorphous silicon with large grain formation[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(1/2):149-153. |
[32] | Kumar, P .Electric-field mediated nickel-induced nanocrystallization of amorphous silicon thin films in the complete absence of external heating[J].Applied physics, A. Materials science & processing,2010(2):473-479. |
[33] | Keevers M J;Young T L;Schubert U.10% efficient CSG mini modules[A].Milan,2007 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%