利用射频磁控溅射法通过调节硅(Si)靶的溅射功率制备了不同的富硅氧化硅(SiOx,1＜x＜2)薄膜.通过高温热处理,得到了镶嵌在SiOx薄膜中的硅纳米晶(Si-NCs).而SiOx薄膜热处理后的光致发光(PL)强度及其MOS器件的导电性都存在随其硅含量的增大而先增强后减弱的趋势,且光致发光有一定的红移现象.这是由于随着硅含量的增大,SiOx薄膜中Si-NCs的结构与分布发生改变,形成“接触”Si-NCs,从而使得光学和电学性能发生改变.
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