利用低能氮离子对聚[(3--乙酰基吡咯--2,5--二)对二甲氨基苯甲烯](Papdmabeq) 薄膜进行了离子注入改性(注入能量为10$\sim$35 keV、 剂量为1.2$\times$10$^{16}\sim$2.2$\times$10$^{17}$ ions/cm$^{2}$), 研究了与材料三阶非线性极化率相关的物理量的变化规律. 结果表明, 氮离子注入使Papdmabeq薄膜的光电特性都发生了显著变化. 适当能量和剂量的氮离子注入Papdmabeq薄膜后, 薄膜中导电岛的数量增加, 在聚合物分子链间形成了大的导电区域, 导致其电导率显著提高. 当注入离子的能量为25 keV、剂量为2.2$\times$10$^{17}$ ions/cm$^{2}$时, Papdmabeq薄膜的电导率为9.2$\times$10$^{-4}$ S/cm, 比本征态Papdmabeq的电导率提高了5个数量级, 且离子注入后薄膜电导率的环境稳定性优于经碘掺杂的Papdmabeq. 氮离子注入可以使这种聚合物薄膜在可见光范围内的光吸收大幅度提高, 使共轭程度得到显著增强. 当注入离子的能量为35 keV、 剂量为2.2$\times$10$^{17}$ ions/cm$^{2}$时, Papdmabeq的光学禁带宽度($E_{\rm g}$)由1.626 eV降低到1.340 eV.
Investigation of optical and electrical properties of poly[(3--acetylpyrrole--2,5--diyl)p--(N,N--dimethylamino)benzylidenequinomethane]] (Papdmabeq) thin film implanted by low energy ion was carried out. The influence of ion implantation on the parameters that were related to the third--order nonlinear optical susceptibility was especially studied (energy of nitrogen ion 10$\sim$35 keV, while the dose 1.2$\times$10$^{16}\sim$2.2$\times$10$^{17}$ ions/cm$^{2}$). The results show that the conjugated chain of the polymer increases when ion implantation is performed, its film surface conductivity is 5 order of magnitude higher than that of the intrinsic sample when the dose is about 2.2$\times$10$^{17}$ions/cm$^{2}$ and energy 25 keV, and when the dose is about 2.2$\times$10$^{17}$ions/cm$^{2}$ and energy 35 keV, its optical band gap is 1.340 eV, less than that of the intrinsic sample (1.626 eV).
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