本文采用一步电沉积法在ITO玻璃衬底上成功制备了不同Cu/In比的CuInS2(CIS)薄膜.采用扫描电子显微镜、能谱仪、X射线衍射和紫外-可见分光光度计对制备的薄膜进行了表征,并研究了Cu/In比对薄膜结晶性和光学性能的影响.研究表明:通过优化电解液成分、pH值和电沉积条件,可得到均匀致密、与衬底结合力强的CIS薄膜;Cu/In比的增大有助于提高退火后薄膜的结晶性能,增大晶粒尺寸;所制备的薄膜均为单一黄铜矿相,具有较好的光吸收性能,其禁带宽度约为1.47 eV.
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