TiNi thin films were sputter-deposited on circular single-crystal silicon substrates un-der various sputtering parameters. The crystal structure and residual stress of the as-deposited films were determined by X-ray diffraction and substrate-curvature method.The phenomenon of stress-suppressed martensitic transformation was observed. It isconsidered that the residual stresses in SMA thin films based on circular substratesact as balanced biaxial tensile stresses. The status of equilibrant delays the align-ment of self-accommodated variants and the volume shrinkage during the martensitictransformation.
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