通过控制局部双轴压应变SiGe材料的缺陷、组分与厚度,设置了多晶Si侧壁与Si缓冲层的特别几何结构.采用固态源分子束外延MBE设备生长了适于PMOSFET器件的局部双轴压应变Si0.8Ge0.2材料.经SEM、AFM、XRD测试分析,该材料表面粗糙度达0.45nm;Si1-xGex薄膜中Ge组分x=0.188,厚度为37.8nm,与设计值较接近;穿透位错主要由侧壁界面产生,集中在窗口边缘,密度为(0.3～1.2)×10.cm-2;在表面未发现十字交叉网格,且Si0.8Ge0.2衍射峰两侧干涉条纹清晰,说明Si0.8Ge0.2与Si缓冲层界面失配位错已被有效抑制.测试分析结果表明,生长的局部双轴压应变SiGe材料质量较高,可用于高性能SiGe PMOSFET的制备与工艺参考.
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