采用射频磁控溅射技术分别在纳米与微米金刚石薄膜上制备立方氮化硼(c- BN)薄膜.金刚石薄膜由拉曼光谱(Raman)及原子力显微镜(AFM)进行表征.采用傅立叶变换红外光谱(FTIR)研究了不同沉积温度对c- BN薄膜生长的影响,结果表明在金刚石薄膜上生长c- BN不存在温度阈值,室温下生长的c- BN含量可达70%以上.当沉积温度由室温向上升高时,对于纳米金刚石薄膜衬底上生长的BN薄膜而言,其中的立方相含量反而逐渐降低.此外,随着沉积温度的降低,c- BN对应的峰位向低波数方向偏移的现象表明低温下生长的c- BN薄膜内应力较小.文中探讨了产生此现象的原因.
The c-BN films were prepared by radio frequency magnetron sputtering on the nanocrystalline and microcrystalline diamond films.Diamond films were characterized by Raman spectroscopy and atomic force microscopy.Fourier transform infrared spectroscopy (FTIR) was adopted to characterize the effect of different deposition temperatures on the growth of BN films. Experimental results show that there isn't threshold temperature occurs on the deposition of c-BN, and the content of cubic phase in the BN films prepared at room temperature could be more than 70%. When the nanocrystalline diamond films are used as substrates, the content of cubic phase in the BN films will decrease as the temperature increasing. Furthermore, the FTIR peak corresponding to c-BN shifts to a lower wavenumber with decreasing the growth temperature, indicating that less stress appears in the c-BN films at a lower growth temperature.The reason caused this phenomenon was dissused in this paper.
参考文献
| [1] | Pascallon J. .Microstructure of c-BN thin films deposited on diamond films[J].Diamond and Related Materials,1999(2 Mar):325-330. |
| [2] | Zhang WJ;Bello I;Lifshitz Y;Chan KM;Wu Y;Chan CY;Meng XM;Lee ST .Thick and adherent cubic boron nitride films grown on diamond interlayers by fluorine-assisted chemical vapor deposition[J].Applied physics letters,2004(8):1344-1346. |
| [3] | Huang PC;Yang TS;Chu SS;Wong MS .Structural evolution of boron nitride films grown on diamond buffer-layers[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(3):973-978. |
| [4] | Pascallon J;Stambouli V;Ilias S et al.Deposition of c-BN Films on Diamond:Influence of the Diamond Roughness[J].Materials Science and Engineering,1999,B59:240-243. |
| [5] | He Q;Li CM;Frankel C;Pilione L;Drawl B;Lu FX;Messier R .Deposition of c-BN on silicon substrates coated with diamond thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(1/2):96-102. |
| [6] | Leung K M;Li H Q;Zou Y S .Structural Analysis of Cubic Boron Nitride Films by Ultraviolet Raman Spectroscopy[J].Applied Physics Letters,2006,88:241922-1-241922-3. |
| [7] | 吴南春,夏义本,谭寿洪,刘健敏,苏青峰,王林军.正偏压对纳米金刚石薄膜结构和电阻率的影响[J].无机材料学报,2007(02):381-384. |
| [8] | 刘健敏,夏义本,王林军,张明龙,苏青峰.工艺条件对热丝CVD金刚石薄膜电学性能的影响[J].无机材料学报,2006(04):1018-1024. |
| [9] | Tien-Syh Yang;Jir-Yon Lai;Ming-Show Wong;Chia-Liang Cheng .Combined effects of argon addition and substrate bias on the formation of nanocrystalline diamond films by chemical vapor deposition[J].Journal of Applied Physics,2002(9):4912-4917. |
| [10] | Spear K E .Diamond-ceramic Coating of the Future[J].Journal of the American Ceramic Society,1989,72:171-191. |
| [11] | Mirkarimi P B;McCarty K F;Medlin D L .Review of Advances in Cubic Boron Nitride Film Synthesis[J].Materials Science and Engineering,1997,R21:47-100. |
| [12] | Friedmann T A;Mirkarrimi P B;Medlin D L et al.Ion-assisted Pulsed Laser Deposition of Cubic Boron Nitride Films[J].Journal of Applied Physics,1994,76(05):3088-3101. |
| [13] | Y. N. Zhao;B. Wang;S. Yu;Y. C. Tao;Z. He;D. M. Li;G. T. Zou .Preparation of c-BN films by RF sputtering and the relation of BN phase formation to the substrate bias and temperature[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1998(2):220-222. |
| [14] | Fahy S .Calculation of the Strain-Induced Shifts in the Infrared_Absorption Peaks of Cubic Boron Nitride[J].Physical Review B:Condensed Matter,1995,51:12873-12875. |
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