为认识和建立聚噻吩膜(PBT)形态的变化与膜电化学性能及电化学合成条件之间的联系,采用灰度法和交流阻抗法对不同电化学条件下聚噻吩膜的分维值进行描述.研究表明,电化学合成的PBT膜具有统计分形特征,薄膜的分维值小,而厚膜的分维值大,薄膜与厚膜具有不同的分形特征.在0～0.6 V电位范围内,随着外加电位的正移,PBT膜的分维值由2.101增加到2.304,而反应电阻则由4152 Ω·cm2降至3.585 Ω·cm2,验证了PBT膜具有由绝缘态转变为氧化态的开关行为.随着电化学合成时间的增加,电极上PBT膜的分维值在7 min时出现一个极小值2.060,说明紧靠电极表面的PBT薄层结构规整.
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