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采用脉冲磁控溅射系统在玻璃衬底上制备了ZnO∶B薄膜,利用霍尔测试仪和紫外-可见光-近红外分光光度计及逐点无约束最优化法,研究了溅射气压(0.1 ~3 Pa)对ZnO薄膜的光学和电学特性的影响.结果表明:ZnO∶B薄膜在可见光区域内的平均透光率高于80%,近红外波段的透过率及薄膜的电阻率与溅射气压成正比;折射率n随溅射气压降低呈下降趋势,其值介于1.92 ~2.09之间;在较低的溅射气压下(PAr=0.1 Pa)获得的薄膜电阻率最小(3.7×10-3Ω·cm),且对应着小的光学带隙(Eg=3.463 eV).

参考文献

[1] Abduev AK;Akhmedov AK;Asvarov AS .The structural and electrical properties of Ga-doped ZnO and Ga, B-codoped ZnO thin films: The effects of additional boron impurity[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2007(4):258-260.
[2] Hagiwara Y.;Kunioka A.;Nakada T. .Improved J(sc) in CIGS thin film solar cells using a transparent conducting ZnO : B window layer[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):267-271.
[3] 周继承,李莉.溅射气压对ZnO透明导电薄膜光电性能的影响[J].中国有色金属学报,2009(07):1278-1283.
[4] Deok Kyu Kim;Hong Bae Kim .Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2011(2):421-425.
[5] 刘志文,谷建峰,付伟佳,孙成伟,李勇,张庆瑜.工作气压对磁控溅射ZnO薄膜结晶特性及生长行为的影响[J].物理学报,2006(10):5479-5486.
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