本文建立了采用分子束外延法制备InGaP/GaAs异质结构的热力学模型,其中考虑了两个重要的因素,由晶格失配引起的内在应力和InP的脱附.所得到的模型与现有实验结果匹配较好.该模型的实验结果表明在InGaP的生长过程中,生长温度,In/Ga束流比及合金组分之间的相互关系,同时也与实验数据相吻合.该模型对于其他气相沉积生长方式也具有一定的适用性.
A thermodynamic model for molecular beam epitaxy(MBE) growth of InGaP/GaAs heterostructures was established that considers two key factors, intrinsic strain due to the lattice mismatch and the desorption of InP. The derivation of the model is presented as well as comparisons with existing experimental data. The calculation results of this model indicated that the interactions among growth temperature, In/Ga flux ratio and alloy composition during the growth of InGaP which accord with the experimental data. The model is also available for other vapor deposition methods.
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