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Ta_2O_5薄膜具有很好的电学性能和光学性能,制备方法种类繁多,如溶胶-凝胶法(Sol-gel)、化学气相沉积法、电子束蒸发技术、溅射法、Ta层阳极氧化或热氧化法、离子辅助沉积法(IBAD)、原子层沉积法(ALD)等.评述了现有各种制备方法的优缺点,综述了Ta_2O_5薄膜各种方法制备的条件、薄膜的功能性质等,并评析了金属有机化合物为前驱体制备性能优良的Ta_2O_5薄膜的前景.

Ta_2O_5 films possess good electrics properties and optics properties. Currently, the preparation methods are classified as sol-gel,CVD,ALD and so on, the merits and demerits of those methods are discussed, the controlling conditions of these fabrication methods and the as-synthesized film's properties are summarized. Finally, theprospect of using the metal-organic compound as precursor to prepare excellent performance Ta_2O_5 films is also introduced.

参考文献

[1] 蒋毅坚,R.Guo,Bhalla.Ta2O5单晶的激光法生长[J].应用激光,2002(02):244-246.
[2] 刘洪祥,熊胜明,李凌辉,张云洞.离子束溅射沉积Ta2O5光学薄膜的实验研究[J].光电工程,2004(03):41-43,55.
[3] Atanassova E et al.Thin RF sputtered and thermal Ta_2O_5 on Si for high density DRAM application[J].Microelectronics Reliability,1999,39:1185.
[4] 王超,庄大明,张弓,吴敏生.五氧化二钽薄膜的Ⅰ-Ⅴ特性[J].材料研究学报,2003(03):332-336.
[5] 揣荣岩,孟丽囡,韦春才.钽阳极氧化膜的防晶化研究[J].沈阳工业大学学报,2004(04):433-434,452.
[6] Zhang Junying et al.Thin tantalum oxide films prepared by 172nm Excimer lamp irradiation using sol-gel method[J].Thin Solid Films,1998,318:252.
[7] Kavanagh Y et al.The characteristics of thin film electrolu-minescent displays produced using sol-gel produced tantalum pentoxide and zinc sulfide[J].Thin Solid Films,2004,447:85.
[8] 杨声海,刘银元,邱冠周,唐谟堂.乙醇钽化学气相沉积制备Ta2O5薄膜研究进展[J].稀有金属材料与工程,2007(12):2075-2079.
[9] Devine B A B;Chaneliere C;Autran J L et al.Use of carbon-free Ta_2O_5 thin-films as a gate insulator[J].Microelectronic Engineering,1997,36:61.
[10] Kukli K.;Matero R.;Leskela M.;Ritala M. .Influence of atomic layer deposition parameters on the phase content of Ta2O5 films[J].Journal of Crystal Growth,2000(3/4):459-468.
[11] Forsgren K;Harta A .Halide chemical vapour deposition of Ta_2O_5[J].Thin Solid Films,1999,343-344:111.
[12] Porporati A;Roitti S;Sabizero O .Metallorganic chemical vapor deposition of Ta_2O_5 films[J].Journal of the European Ceramic Society,2003,23:247.
[13] Kwak I C;Lee Y H;Choi Y H .Strain relaxation behavior of the Ta_2O_5 multiple quantum wells observed by transmission electron microscopy[J].Applied Surface Science,2004,230:249.
[14] Masse JP;Szymanowski H;Zabeida O;Amassian A;Klemberg-Sapieha JE;Martinu L .Stability and effect of annealing on the optical properties of plasma-deposited Ta2O5 and Nb2O5 films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(4):1674-1682.
[15] Xu Cheng;Dong Hongcheng et al.Investigation of annealing effects on the laser-induced damage threshold of amorphous Ta_2O_5 films[J].Optics & Laser Technology,2009,41:258.
[16] 张光勇,薛亦渝,郭培涛,王汉华,马中杰.电子束蒸发沉积Ta2O5光学薄膜的研究[J].压电与声光,2008(01):12-15.
[17] Shihata S et al.Dielectric constant of Ta_2O_5 thin films de-posited by r.f sputtering[J].Thin Solid Films,1996,227(122):124.
[18] Willey R R.Practical design and production of optical thin films[M].New York:Marcel Dekker,Inc,1996:109.
[19] 董骐,罗蓉平,张守忠,杜建,钟钢,田凯,文学春,刘祥武.气离溅射离子镀制氮化钛[J].真空科学与技术学报,2005(01):69-74.
[20] 申林,熊胜明,刘洪祥,李凌辉,张云洞.氧化物激光薄膜的离子束溅射制备技术[J].强激光与粒子束,2003(12):1175-1180.
[21] 曹莹,丁文,毛海平,周勇.RF溅射制备Ta2O5薄膜及其电学性能的研究[J].真空电子技术,2005(05):51-54.
[22] 张幸福,魏爱香.五氧化二钽高K薄膜作为MOSFET绝缘栅研究[J].电子质量,2007(04):1-3.
[23] Chuen-Lin Tien .Influence of ejection angle on residual stress and optical properties of sputtering Ta_2O_5 thin films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2008(5P2):2890-2895.
[24] Liu Wen Jen et al.The study of optical and rnicrostructural evolution of Ta_2O_5 and SiO_2 thin films by plasma ion assisted deposition method[J].Surface and Coatings Technology,2005,196:69.
[25] 傅晶晶,付秀华,邢政.离子束辅助沉积红外增透薄膜工艺[J].长春理工大学学报(自然科学版),2008(02):43-45.
[26] Yoon, SG;Kang, SM;Jung, WS;Kim, SW;Yoon, DH .Effect of assist ion beam voltage on intrinsic stress and optical properties of Ta2O5 thin films deposited by dual ion beam sputtering[J].Thin Solid Films,2008(11):3582-3585.
[27] Kukli K;Aarik J;Aidla A et al.Atomic layer deposition of tantalum oxide thin films from iodide precursor[J].CHEMISTRY OF MATERIALS,2001,13:122.
[28] Kai Kamada;Maki Mukai;Yasumichi Matsumoto .Anodic dissolution of tantalum and niobium in acetone solvent with halogen additives for electrochemical synthesis of Ta{sub}2O{sub}5 and Nb{sub}2O{sub}5 thin films[J].Electrochimica Acta,2004(2):321-327.
[29] 沈承金,欧雪梅,赵宇龙.RuO2、IrO2和Ta2O5多元氧化物涂层阳极的研究[J].腐蚀科学与防护技术,2006(04):252-254.
[30] Ensinger W et al.Three-dimensional dose uniformity of plasma immersion ion implantation shown with the example of macro-trenches[J].Surface and Coatings Technology,1999,120-121:347.
[31] Yoshinari Makimura et al.Cobalt and tantalum additions for enhanced electrochromic performances of nickel-based oxide thin films grownhy pulsed laser deposition[J].Applied Surface Science,2006,252:4593.
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