研究了100 mm GaAs赝配高电子迁移率晶体管(PHEMT)外延材料量产的稳定性控制.通过选择控制参数和控制周期,提高了外延材料性能的重复性和稳定性.12个样品方阻的标准差为0.53％,全部偏差1.66％.通过优化生长工艺有效的降低了样品表面颗粒,样品表面颗粒数量减小到612/片,这些参数均达到或超过国外主流外延厂商水平.
参考文献
| [1] | Matthew F. O'Keefe;John S. Atherton;Wolfgang Bosch;Paul Burgess;Nigel I. Cameron;Christopher M. Snowden .GaAs pHEMT-based technology for microwave applications in a volume MMIC production environment on 150-mm wafers[J].IEEE Transactions on Semiconductor Manufacturing,2003(3):376-383. |
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