首先采用溶胶-凝胶法在Al2O3基体上制备了TiO2纳米晶薄膜,然后在管式气氛炉中,用氨气作为还原剂,直接氮化制备TiO2纳米晶薄膜;从而成功地在α-Al2O3陶瓷基片上制备了纳米晶TiN薄膜.利用XRD、XPS、FE-SEM等分析技术,研究了制备的纳米晶TiN薄膜的相组成及形貌.结果表明最佳工艺条件为:氮化温度为700℃,氮化时间为1h.
At first, nanocrystalline TiO2 films were prepared by a sol-gel method on Al2O3 substrates. Then, nanocrystalline TiN films were successfully obtained by direct nitridation of the nano TiO2 films using NH3 as the reductant agent in a tube furnace. XRD, XPS and FE-SEM were used to study phase compositions and morphologies of the nanocrystalline TiN films. The results indicate that the best condition for preparing nanocrystalline TiN films by direct nitridation of films is nitridation temperature about 700℃ and nitridation duration of about 1h.
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