本文计算了平面内涨落电磁场产生的电磁能密度和两平行平面间的微纳米尺度辐射热流密度,分析了近场辐射中单色效应对辐射的影响,结果表明对于碳化硅(SiC),单色效应极大地提高了电磁能密度和近场辐射换热量,而对于铝(Al)则没有明显的单色效应.本文还分析了不同偏振态对热辐射的影响.针对SiC材料,在微纳米尺度范围内,电磁能密度和辐射换热量主要受p偏振的近场倏逝波的影响,而s偏振电磁波和p偏振的远场传播波对微纳米尺度下辐射总量的贡献可以忽略.
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