采用溶胶-凝胶旋涂法在石英衬底上制备了不同Mg,Sn掺杂比例的ZnO薄膜,研究了不同Mg,Sn比例对ZnO薄膜微观结构、表面形貌和光电性能的影响及其内在机制.结果表明:Mg,Sn掺杂后薄膜仍保持六方纤锌矿结构并沿(002)方向择优生长,掺入2％的Mg后,晶粒有所长大,保持2％ Mg不变,随着Sn的掺入,薄膜晶粒减小,但薄膜的致密度、表面平整度以及薄膜晶粒均匀性却有明显的改善;适量Mg,Sn掺杂,一方面,因Mg,Zn离子的金属性差异和Sn4+替位Zn2+晶格位置提供两个自由电子使薄膜载流子浓度增加产生Burstein-Moss效应,另一方面,因晶粒尺寸变小产生量子限域效应,薄膜禁带宽度增大,同时可见光透过率也有着明显提高;Mg,Sn共掺杂使薄膜结晶变好,载流子迁移率增大,同时载流子浓度上升,ZnO薄膜电阻率呈现较大幅度的下降.
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