热蒸发制备Zn掺杂SnS2薄膜,研究不同Zn含量及热处理条件对薄膜的物相结构、表面形貌和光电性能的影响.实验给出用Sn:S=1∶1.08(wt)混合粉末沉积的薄膜,经380℃、15min热处理后得到简单正交晶系的SnS2薄膜;9(wt％)掺Zn后的薄膜热处理条件为370℃、20min.Sn、S和Zn分别以正4价、负2价和正2价存在于薄膜中.SnS2薄膜的直接光学带隙为2.12eV,掺Zn后为2.07eV;薄膜的电阻率从未掺Zn时的4.97×102Ω·cm降低到2.0Ω· cm,下降了两个数量级,所有SnS2薄膜导电类型均为N型.
参考文献
| [1] | T.Jiang;G.A.Ozin;A.Verma et al.Adsorption and sensing properties of microporous layered tin sulfide materials[J].Journal of Materials Chemistry,1998,8:1649. |
| [2] | J.J Loferski .Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy Conver sion[J].Journal of Applied Physics,1956,27(07):777-784. |
| [3] | Ji YJ.;Zhang H.;Ma XY.;Xu J.;Yang D. .Single-crystalline SnS2 nano-belts fabricated by a novel hydrothermal method[J].Journal of Physics. Condensed Matter,2003(44):L661-L665. |
| [4] | Dongwoo Chun;R.M Walser;R W Bene et al.Polaritydependent memory switching in devices with SnSe and SnSe2 crystals[J].Applied Physics Letters,1974,24(10):479-481. |
| [5] | 程树英,黄赐昌,陈岩清,陈国南.光电薄膜SnS的制备及其性能[J].半导体学报,2005(06):1173-1177. |
| [6] | N.G. Deshpande;A.A. Sagade;Y.G. Gudage .Growth and characterization of tin disulfide (SnS_2) thin film deposited by successive ionic layer adsorption and reaction (SILAR) technique[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2007(1/2):421-426. |
| [7] | M.M. El-Nahass;H.M. Zeyada;M.S. Aziz;N.A. El-Ghamaz .Optical properties of thermally evaporated SnS thin films[J].Optical materials,2002(3):159-170. |
| [8] | A. Sanchez-Juarez;A. Tiburcio-Silver;A. Ortiz .Fabrication of SnS_2/SnS heterojunction thin film diodes by plasma-enhanced chemical vapor deposition[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(6):452-456. |
| [9] | M.M. El-Nahass;H.M. Zeyada;M.S. Aziz;N.A. El-Ghamaz .Optical properties of thermally evaporated SnS thin films[J].Optical materials,2002(3):159-170. |
| [10] | 马兴泰,辛宝平,吴莹,陈岗,吴锋,陈实.水油两相体系生物还原-化学沉淀耦合反应制备纳米二硫化锡[J].无机化学学报,2011(04):687-691. |
| [11] | 马琳,李辉,常焜 |
| [12] | Yang Huaming;Huang Chenghuan;Su Xiaohui .Synthesis of homogeneous PVP-capped SnS2 submicron particles via microwave irradiation[J].Materials Letters,2006,60:3714-3717. |
| [13] | 杨晶,李健,白海平,卢建丽.SnS2纳米薄膜的制备及结构和光学特性[J].材料科学与工程学报,2009(01):83-86,128. |
| [14] | 葛其明,刘学建,黄智勇,黄莉萍.LPCVD氮化硅薄膜的化学组成[J].材料科学与工程学报,2006(02):192-195. |
| [15] | 罗仲宽,李明,刘剑洪,洪伟良,刘玉.氧化镉薄膜的制备与性质研究[J].材料科学与工程学报,2003(06):806-808. |
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