Li-doped p-type ZnO ceramics were prepared by conventional methods according to the chemical formula Zn1-xLixO2 where x=0.5, 1.0, 1.5 and 2.0 mole fraction, respectively.The crystal structures of the prepared samples were studied by X-ray diffraction analysis.The dielectric properties (including dielectric constant ε'and dielectric loss ε") and dc-electrical conductivity [σ(Ω-1.cm-1)] were investigated.The dielectric constant ε' was sharply decreased at the low frequency range and independent on frequency at high frequency range.Otherwise, the dielectric loss ε" varied with frequency and showed absorption peak located from 200 Hz to 4 kHz and moved to higher frequency as the concentration of Li+ doped increased.It was found that dcelectrical conductivity logσ varied from -9 to -5 and the energy gap width were calculated by using Arrhenius equation.The p-type conductivity of Li-doped ZnO may be attributed to the formation of a Lizn-Lii donor complex, which is limited by reducing the amount of Lii.
参考文献
| [1] | X H Wang;B Yao;Z Z Zhang;B H Li;Z P Wei;D Z Shen;Y M Lu;X W Fan .The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment[J].Semiconductor Science and Technology,2006(4):494-497. |
| [2] | Y R Ryu;S Zhu;D C Look;J M Wrobel H M Jeong and H W White .[J].d Cryst Growth,2000,216:330. |
| [3] | Y Yoshino;T Makino;Y Katayama;T Hata .[J].Vacuum,2000,59:538. |
| [4] | J B Lee;H J Lee;S H Seo;J S Park .[J].Thin Solid Films,2000,398-399:641. |
| [5] | C H Park;S B Zhang;S H Wei .[J].Physical Review B:Condensed Matter,2002,66:073202. |
| [6] | C Gonales;D Block;R T Cox;A Herve .[J].Journal of Crystal Growth,1982,59:375. |
| [7] | D Block;A Herve;R T Cox .[J].Physical Review B:Condensed Matter,1982,25:6049. |
| [8] | A Onodera;N Tamaki;Y Kawamura;I N Sakagami .[J].Japanese Journal of Applied Physics,1996,35:5160. |
| [9] | M G Wardle;J P Goss;P R Bridon .[J].Physical Review B:Condensed Matter,2005,71:155205. |
| [10] | T R N Kutty;S Ezhilvalavan .[J].Japanese Journal of Applied Physics,1995,34:6125. |
| [11] | S Ezhilvalavan;T R N Kutty .[J].Journal of Materials Science:Materials in Electronics,1997,7:37. |
| [12] | S Ezhilvalavan;T R N Kutty .[J].Journal of Physics D:Applied Physics,1996,29:809. |
| [13] | M C S Norberga;W A Mannheimer .[J].Journal of the American Ceramic Society,1996,79(06):1504. |
| [14] | G W Bak;M Kryszewski .[J].Proceedings of the SPIE,1997,3181:2. |
| [15] | J F Cordaro;Y Shin;J E May .[J].Journal of Applied Physics,1986,60(12):4186. |
| [16] | J D Levine .[J].CRC Crit Rev Solid State Sei,1975,5:597. |
| [17] | M Rossinelli;G Blatter;F Greuter;B C H Steele.Electrical Ceramics[M].British Ceramic Society,Stoke-on-Trent,1985:1. |
| [18] | S Ezhilvalavan;T R N Kutty .[J].Iete Journal of Research,1997,43:233. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%