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采用XPS方法研究了sol-gel工艺制备的KTN(x=0.35)薄膜的成分和结构.结果表明,除了表面被碳污染外,薄膜中无残余的碳和其他杂质.其成分与原料的化学计量比相近,且沿深度均匀分布.各元素的化学状态证实薄膜系钙钛矿型KTN结构.Ar+溅射后的XPS谱反映K严重偏低,Ta和Nb的化学状态改变,是Ar+轰击引起K择优溅射及化合物分解所致.

Epitaxial KTN (x=0.35) eletrooptic thin films were formed on (100) SrTiO3 substrates by sol-gel process.In this peper, wide and narrow scans of XPS analyses were studied on the surface of KTN thin films before and after Ar+ SPuttering for 10min. The resul

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[6] OrlowskiR,BoatnerLA,KratigE.OPtCommun,1980
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