使用电化学法在ITO玻璃上制备了CdSe纳米晶薄膜.研究了沉积电位对薄膜晶体结构、表面形貌及光学性质的影响,并讨论了所得样品禁带宽度与晶粒尺寸的关系.X-ray衍射结果表明:沉积电位在-600～-700mV之间均可得到立方相CdSe,晶粒尺寸随沉积电位降低而增大.原子力显微镜观察表明,沉积电位较高时,粒子聚集为块状或柱状,沉积电位较低时,粒子呈现不均匀团聚.透射光谱测试显示:在350～850nm波段范围内,随沉积电位降低,透过率降低,吸收边红移.所得样品的禁带宽度均比体相CdSe大,且随晶粒尺寸的增大而减小,表现出明显的量子尺寸效应.
参考文献
| [1] | Chen Fuyi;Jie Wanqi;Cai Xiaomei .[J].Thin Solid Films,2007,4:167. |
| [2] | M. Bouroushian;J. Charoud-Got;Z. Loizos;N. Spyrellis;G. Maurin .Structure and properties of CdSe and CdSe{sub}xTe{sub}(1-x) electrolytic deposits on Ni and Ti cathodes: influence of the acidic bath pH[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(1):39-47. |
| [3] | Brody J P;Luo F;Sicpccz Z P et al.[J].IEEE Transactions on Electron Devices,1975,22:739-749. |
| [4] | Jones A .[J].Chemical Society Reviews,1997,26:101-110. |
| [5] | 王慧丽,马晓东,钱雪峰,朱子康.CdSe薄膜的制备及其图形化[J].材料导报,2006(07):119-122. |
| [6] | Murali KR;Swaminathan V;Trivedi DC .Characteristics of nanocrystalline CdSe films[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2004(1):113-118. |
| [7] | Sarangi SN;Sahu SN .CdSe nanocrystalline thin films: composition, structure and optical properties[J].Physica, E. Low-dimensional systems & nanostructures,2004(1/2):159-167. |
| [8] | Shen Chengmin;Zhang Xiaogang;Li Hulin .[J].Materials Science and Engineering B,2001,84(03):265-270. |
| [9] | Kokate A V;Suryavanshi U B;Bhosale C H .[J].Journal of Solar Energy Engineering,2006,80(02):156-160. |
| [10] | 霍兹 G;赵辉.纳米材料电化学[M].北京:科学出版社,2006 |
| [11] | Skyllas Kazacos M;Miller B .[J].Journal of the Electrochemical Society,1980,127(11):2378-2381. |
| [12] | Hodes G;Albu-Yaran A;Decker F et al.[J].Physical Review B,1987,36(08):4215-4221. |
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